TY - JOUR
T1 - Selective formation of a SnO2 cap layer, its growth behavior, and oxidation resistance
AU - Fujii, Yoshihito
AU - Koike, Junichi
AU - Sutou, Yuji
AU - Li, Zifeng
AU - Neishi, Koji
PY - 2010/5/1
Y1 - 2010/5/1
N2 - In this paper, we propose a new method of cap-layer formation. The cap layer of SnO2 is formed by the displacement plating of Sn, followed by the oxidation of the plated Sn. An excellent plating selectivity was found between Cu and SiO2, but not with SiOCH. The SnO2 layer of 90 nm thickness showed a good oxidation resistance of the underlying Cu after heat treatment at 480°C in air (PO2 = 105 Pa). In contrast, the SnO2 layers of 6 and 9 nm thickness showed oxidation resistance at 400°C in Ar+10 ppm O2 (PO2 = 1 Pa), but not in Ar+1000 ppm O2 (PO2 = 100 Pa).
AB - In this paper, we propose a new method of cap-layer formation. The cap layer of SnO2 is formed by the displacement plating of Sn, followed by the oxidation of the plated Sn. An excellent plating selectivity was found between Cu and SiO2, but not with SiOCH. The SnO2 layer of 90 nm thickness showed a good oxidation resistance of the underlying Cu after heat treatment at 480°C in air (PO2 = 105 Pa). In contrast, the SnO2 layers of 6 and 9 nm thickness showed oxidation resistance at 400°C in Ar+10 ppm O2 (PO2 = 1 Pa), but not in Ar+1000 ppm O2 (PO2 = 100 Pa).
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U2 - 10.1143/JJAP.49.05FA02
DO - 10.1143/JJAP.49.05FA02
M3 - Article
AN - SCOPUS:77953167401
VL - 49
SP - 05FA021-05FA024
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 5 PART 3
ER -