Selective Fabrication of Mott-Insulating and Metallic Monolayer TaSe2

Yuki Nakata, Takuya Yoshizawa, Katsuaki Sugawara, Yuki Umemoto, Takashi Takahashi, Takafumi Sato

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

We report the selective fabrication of monolayer TaSe2 with trigonal-prismatic (1H) or octahedral (1T) crystal structure on bilayer graphene by the molecular-beam-epitaxy method. By angle-resolved photoemission spectroscopy, we found that monolayer 1H-TaSe2 shows a metallic electronic structure with a dispersive band across the Fermi level (EF) similar to the bulk crystal, while monolayer 1T-TaSe2 has a sizable energy gap at EF indicative of the insulating nature in contrast to the metallic nature of bulk 1T-TaSe2. We discuss the origin and implications of differences in the electronic structure among monolayer and bulk TaSe2 by comparing the experimental results with first-principles band-structure calculations as well as previous studies on bulk TaSe2

Original languageEnglish
Pages (from-to)1456-1460
Number of pages5
JournalACS Applied Nano Materials
Volume1
Issue number4
DOIs
Publication statusPublished - 2018 Apr 27

Keywords

  • 2D materials
  • Mott insulator
  • TaSe
  • angle-resolved photoemission spectroscopy
  • electronic states
  • transition-metal dichalcogenides

ASJC Scopus subject areas

  • Materials Science(all)

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