Selective excitation of a symmetric interference plasmon mode in two close planar SiO2/Si interfaces observed by electron energy-loss spectroscopy

Hirotaka Komoda; Atsuyuki Watada; Kazutaka Ishida; Kaoru Sasakawa; Tomoki Okano; Yoshiyuki Tsubokawa; Masami Terauchi

doi:10.1143/jjap.40.4512

Selective excitation of a symmetric interference plasmon mode in two close planar SiO₂/Si interfaces observed by electron energy-loss spectroscopy

Hirotaka Komoda, Atsuyuki Watada, Kazutaka Ishida, Kaoru Sasakawa, Tomoki Okano, Yoshiyuki Tsubokawa, Masami Terauchi

Division of Measurements

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We have studied the effects of the SiO₂/Si interface parallel to an electron beam on transmission electron energy-loss spectra of a SiO₂ area for poly-Si/SiO₂/Si samples. The dependence of the energy-loss spectra on the distance from the interface to the probe position and on the distance between two interfaces was investigated. Spectra obtained from the center of the thick (150 nm) SiO₂ layer had no peak in the energy region of 4-10 eV. However, a peak at about 7 eV was observed in the spectra obtained at a position of 7.5 nm from the SiO₂/Si interface for the same specimen. This peak was assigned to a SiO₂/Si interface plasmon excitation. For the thin (15 nm) oxide poly-Si/SiO₂/Si sample, on the other hand, the peak appeared at 8.7 eV. Furthermore, this peak shifts to higher energies as the oxide thickness decreases. This peak was assigned to an excitation of a symmetric interference plasmon mode in two close planar SiO₂/Si interfaces.

Original language	English
Pages (from-to)	4512-4515
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	40
Issue number	7
DOIs	https://doi.org/10.1143/jjap.40.4512
Publication status	Published - 2001 Jul

Keywords

EELS
Interface plasmon
SiO
Symmetric interference plasmon mode
TEM

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.40.4512

Cite this

Komoda, H., Watada, A., Ishida, K., Sasakawa, K., Okano, T., Tsubokawa, Y., & Terauchi, M. (2001). Selective excitation of a symmetric interference plasmon mode in two close planar SiO₂/Si interfaces observed by electron energy-loss spectroscopy. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 40(7), 4512-4515. https://doi.org/10.1143/jjap.40.4512

Selective excitation of a symmetric interference plasmon mode in two close planar SiO₂/Si interfaces observed by electron energy-loss spectroscopy. / Komoda, Hirotaka; Watada, Atsuyuki; Ishida, Kazutaka; Sasakawa, Kaoru; Okano, Tomoki; Tsubokawa, Yoshiyuki; Terauchi, Masami.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 40, No. 7, 07.2001, p. 4512-4515.

Research output: Contribution to journal › Article › peer-review

Komoda, H, Watada, A, Ishida, K, Sasakawa, K, Okano, T, Tsubokawa, Y & Terauchi, M 2001, 'Selective excitation of a symmetric interference plasmon mode in two close planar SiO₂/Si interfaces observed by electron energy-loss spectroscopy', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 40, no. 7, pp. 4512-4515. https://doi.org/10.1143/jjap.40.4512

Komoda H, Watada A, Ishida K, Sasakawa K, Okano T, Tsubokawa Y et al. Selective excitation of a symmetric interference plasmon mode in two close planar SiO₂/Si interfaces observed by electron energy-loss spectroscopy. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2001 Jul;40(7):4512-4515. https://doi.org/10.1143/jjap.40.4512

Komoda, Hirotaka ; Watada, Atsuyuki ; Ishida, Kazutaka ; Sasakawa, Kaoru ; Okano, Tomoki ; Tsubokawa, Yoshiyuki ; Terauchi, Masami. / Selective excitation of a symmetric interference plasmon mode in two close planar SiO₂/Si interfaces observed by electron energy-loss spectroscopy. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2001 ; Vol. 40, No. 7. pp. 4512-4515.

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abstract = "We have studied the effects of the SiO2/Si interface parallel to an electron beam on transmission electron energy-loss spectra of a SiO2 area for poly-Si/SiO2/Si samples. The dependence of the energy-loss spectra on the distance from the interface to the probe position and on the distance between two interfaces was investigated. Spectra obtained from the center of the thick (150 nm) SiO2 layer had no peak in the energy region of 4-10 eV. However, a peak at about 7 eV was observed in the spectra obtained at a position of 7.5 nm from the SiO2/Si interface for the same specimen. This peak was assigned to a SiO2/Si interface plasmon excitation. For the thin (15 nm) oxide poly-Si/SiO2/Si sample, on the other hand, the peak appeared at 8.7 eV. Furthermore, this peak shifts to higher energies as the oxide thickness decreases. This peak was assigned to an excitation of a symmetric interference plasmon mode in two close planar SiO2/Si interfaces.",

keywords = "EELS, Interface plasmon, SiO, Symmetric interference plasmon mode, TEM",

author = "Hirotaka Komoda and Atsuyuki Watada and Kazutaka Ishida and Kaoru Sasakawa and Tomoki Okano and Yoshiyuki Tsubokawa and Masami Terauchi",

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AU - Sasakawa, Kaoru

AU - Okano, Tomoki

AU - Tsubokawa, Yoshiyuki

AU - Terauchi, Masami

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N2 - We have studied the effects of the SiO2/Si interface parallel to an electron beam on transmission electron energy-loss spectra of a SiO2 area for poly-Si/SiO2/Si samples. The dependence of the energy-loss spectra on the distance from the interface to the probe position and on the distance between two interfaces was investigated. Spectra obtained from the center of the thick (150 nm) SiO2 layer had no peak in the energy region of 4-10 eV. However, a peak at about 7 eV was observed in the spectra obtained at a position of 7.5 nm from the SiO2/Si interface for the same specimen. This peak was assigned to a SiO2/Si interface plasmon excitation. For the thin (15 nm) oxide poly-Si/SiO2/Si sample, on the other hand, the peak appeared at 8.7 eV. Furthermore, this peak shifts to higher energies as the oxide thickness decreases. This peak was assigned to an excitation of a symmetric interference plasmon mode in two close planar SiO2/Si interfaces.

AB - We have studied the effects of the SiO2/Si interface parallel to an electron beam on transmission electron energy-loss spectra of a SiO2 area for poly-Si/SiO2/Si samples. The dependence of the energy-loss spectra on the distance from the interface to the probe position and on the distance between two interfaces was investigated. Spectra obtained from the center of the thick (150 nm) SiO2 layer had no peak in the energy region of 4-10 eV. However, a peak at about 7 eV was observed in the spectra obtained at a position of 7.5 nm from the SiO2/Si interface for the same specimen. This peak was assigned to a SiO2/Si interface plasmon excitation. For the thin (15 nm) oxide poly-Si/SiO2/Si sample, on the other hand, the peak appeared at 8.7 eV. Furthermore, this peak shifts to higher energies as the oxide thickness decreases. This peak was assigned to an excitation of a symmetric interference plasmon mode in two close planar SiO2/Si interfaces.

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