TY - JOUR
T1 - Selective excitation of a symmetric interference plasmon mode in two close planar SiO2/Si interfaces observed by electron energy-loss spectroscopy
AU - Komoda, Hirotaka
AU - Watada, Atsuyuki
AU - Ishida, Kazutaka
AU - Sasakawa, Kaoru
AU - Okano, Tomoki
AU - Tsubokawa, Yoshiyuki
AU - Terauchi, Masami
N1 - Funding Information:
‡ This work was in part supported by a grant from NIH ( 1RO3AI103868 ) and a Department of Homeland Security Contract — HSHQDC‐11‐C‐00064 . The authors would like to thank Steve Riding and Jenny Davis for producing the toxin and its subunits.
PY - 2001/7
Y1 - 2001/7
N2 - We have studied the effects of the SiO2/Si interface parallel to an electron beam on transmission electron energy-loss spectra of a SiO2 area for poly-Si/SiO2/Si samples. The dependence of the energy-loss spectra on the distance from the interface to the probe position and on the distance between two interfaces was investigated. Spectra obtained from the center of the thick (150 nm) SiO2 layer had no peak in the energy region of 4-10 eV. However, a peak at about 7 eV was observed in the spectra obtained at a position of 7.5 nm from the SiO2/Si interface for the same specimen. This peak was assigned to a SiO2/Si interface plasmon excitation. For the thin (15 nm) oxide poly-Si/SiO2/Si sample, on the other hand, the peak appeared at 8.7 eV. Furthermore, this peak shifts to higher energies as the oxide thickness decreases. This peak was assigned to an excitation of a symmetric interference plasmon mode in two close planar SiO2/Si interfaces.
AB - We have studied the effects of the SiO2/Si interface parallel to an electron beam on transmission electron energy-loss spectra of a SiO2 area for poly-Si/SiO2/Si samples. The dependence of the energy-loss spectra on the distance from the interface to the probe position and on the distance between two interfaces was investigated. Spectra obtained from the center of the thick (150 nm) SiO2 layer had no peak in the energy region of 4-10 eV. However, a peak at about 7 eV was observed in the spectra obtained at a position of 7.5 nm from the SiO2/Si interface for the same specimen. This peak was assigned to a SiO2/Si interface plasmon excitation. For the thin (15 nm) oxide poly-Si/SiO2/Si sample, on the other hand, the peak appeared at 8.7 eV. Furthermore, this peak shifts to higher energies as the oxide thickness decreases. This peak was assigned to an excitation of a symmetric interference plasmon mode in two close planar SiO2/Si interfaces.
KW - EELS
KW - Interface plasmon
KW - SiO
KW - Symmetric interference plasmon mode
KW - TEM
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U2 - 10.1143/jjap.40.4512
DO - 10.1143/jjap.40.4512
M3 - Article
AN - SCOPUS:0035387535
VL - 40
SP - 4512
EP - 4515
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 7
ER -