An ultraclean dry etching system using HF gas has been developed. It has been demonstrated experimentally that there exists a critical concentration of HF in N2 gas for etching of various Si oxide films. The critical concentration for native oxide obtained in wet processing or UV O3 organic contamination cleaning is lower than those for thermal oxide, CVD (chemical vapor deposition) oxide, and CVD BSG. The difference becomes large with decreasing moisture level. Based on the results obtained, dry processing using HF gas is proposed as a surface cleaning technique in the ULSI process.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|Publication status||Published - 1988 Dec 1|
|Event||Technical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA|
Duration: 1988 Dec 11 → 1988 Dec 14
ASJC Scopus subject areas
- Electrical and Electronic Engineering