Selective etching of native oxide by dry processing using ultra clean anhydrous hydrogen fluoride

N. Miki; H. Kikuyama; M. Maeno; J. Murota; T. Ohmi

Selective etching of native oxide by dry processing using ultra clean anhydrous hydrogen fluoride

N. Miki, H. Kikuyama, M. Maeno, J. Murota, T. Ohmi

Research Institute of Electrical Communication (RIEC)

Research output: Contribution to journal › Conference article › peer-review

10 Citations (Scopus)

Abstract

An ultraclean dry etching system using HF gas has been developed. It has been demonstrated experimentally that there exists a critical concentration of HF in N₂ gas for etching of various Si oxide films. The critical concentration for native oxide obtained in wet processing or UV O₃ organic contamination cleaning is lower than those for thermal oxide, CVD (chemical vapor deposition) oxide, and CVD BSG. The difference becomes large with decreasing moisture level. Based on the results obtained, dry processing using HF gas is proposed as a surface cleaning technique in the ULSI process.

Original language	English
Pages (from-to)	730-733
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 1988 Dec 1
Event	Technical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA Duration: 1988 Dec 11 → 1988 Dec 14

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "Selective etching of native oxide by dry processing using ultra clean anhydrous hydrogen fluoride",

abstract = "An ultraclean dry etching system using HF gas has been developed. It has been demonstrated experimentally that there exists a critical concentration of HF in N2 gas for etching of various Si oxide films. The critical concentration for native oxide obtained in wet processing or UV O3 organic contamination cleaning is lower than those for thermal oxide, CVD (chemical vapor deposition) oxide, and CVD BSG. The difference becomes large with decreasing moisture level. Based on the results obtained, dry processing using HF gas is proposed as a surface cleaning technique in the ULSI process.",

author = "N. Miki and H. Kikuyama and M. Maeno and J. Murota and T. Ohmi",

year = "1988",

month = dec,

day = "1",

language = "English",

pages = "730--733",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Technical Digest - International Electron Devices Meeting 1988 ; Conference date: 11-12-1988 Through 14-12-1988",

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TY - JOUR

T1 - Selective etching of native oxide by dry processing using ultra clean anhydrous hydrogen fluoride

AU - Miki, N.

AU - Kikuyama, H.

AU - Maeno, M.

AU - Murota, J.

AU - Ohmi, T.

PY - 1988/12/1

Y1 - 1988/12/1

N2 - An ultraclean dry etching system using HF gas has been developed. It has been demonstrated experimentally that there exists a critical concentration of HF in N2 gas for etching of various Si oxide films. The critical concentration for native oxide obtained in wet processing or UV O3 organic contamination cleaning is lower than those for thermal oxide, CVD (chemical vapor deposition) oxide, and CVD BSG. The difference becomes large with decreasing moisture level. Based on the results obtained, dry processing using HF gas is proposed as a surface cleaning technique in the ULSI process.

AB - An ultraclean dry etching system using HF gas has been developed. It has been demonstrated experimentally that there exists a critical concentration of HF in N2 gas for etching of various Si oxide films. The critical concentration for native oxide obtained in wet processing or UV O3 organic contamination cleaning is lower than those for thermal oxide, CVD (chemical vapor deposition) oxide, and CVD BSG. The difference becomes large with decreasing moisture level. Based on the results obtained, dry processing using HF gas is proposed as a surface cleaning technique in the ULSI process.

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UR - http://www.scopus.com/inward/citedby.url?scp=0024175130&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0024175130

SP - 730

EP - 733

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

T2 - Technical Digest - International Electron Devices Meeting 1988

Y2 - 11 December 1988 through 14 December 1988

ER -

Selective etching of native oxide by dry processing using ultra clean anhydrous hydrogen fluoride

Abstract

ASJC Scopus subject areas

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