Selective etching of native oxide by dry processing using ultra clean anhydrous hydrogen fluoride

N. Miki, H. Kikuyama, M. Maeno, J. Murota, T. Ohmi

Research output: Contribution to journalConference articlepeer-review

10 Citations (Scopus)

Abstract

An ultraclean dry etching system using HF gas has been developed. It has been demonstrated experimentally that there exists a critical concentration of HF in N2 gas for etching of various Si oxide films. The critical concentration for native oxide obtained in wet processing or UV O3 organic contamination cleaning is lower than those for thermal oxide, CVD (chemical vapor deposition) oxide, and CVD BSG. The difference becomes large with decreasing moisture level. Based on the results obtained, dry processing using HF gas is proposed as a surface cleaning technique in the ULSI process.

Original languageEnglish
Pages (from-to)730-733
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1988 Dec 1
EventTechnical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA
Duration: 1988 Dec 111988 Dec 14

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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