Selective-epitaxial SiGe HBT with SMI electrodes featuring 9.3-ps ECL-gate delay

Katsuyoshi Washio; Eiji Ohue; Katsuya Oda; Masamichi Tanabe; Hiromi Shimamoto; Takahiro Onai

Selective-epitaxial SiGe HBT with SMI electrodes featuring 9.3-ps ECL-gate delay

Katsuyoshi Washio, Eiji Ohue, Katsuya Oda, Masamichi Tanabe, Hiromi Shimamoto, Takahiro Onai

Research output: Contribution to journal › Conference article › peer-review

Abstract

A selective-epitaxial SiGe base heterojunction bipolar transistor (HBT) with self-aligned stacked metal/IDP (SMI) electrodes is proposed. The SiGe-base structure, self-aligned to the 0.1-μm-wide emitter, effectively reduces collector capacitance and SMI electrodes provide low parasitic resistances. A BPSG/SiO₂-refilled trench was introduced to reduce the substrate capacitance. A 9.3-ps delay time in a differential ECL ring oscillator was achieved.

Original language	English
Pages (from-to)	795-798
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
Publication status	Published - 1997 Dec 1
Externally published	Yes
Event	1997 International Electron Devices Meeting - Washington, DC, USA Duration: 1997 Dec 7 → 1997 Dec 10

ASJC Scopus subject areas

Engineering(all)

Cite this

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title = "Selective-epitaxial SiGe HBT with SMI electrodes featuring 9.3-ps ECL-gate delay",

abstract = "A selective-epitaxial SiGe base heterojunction bipolar transistor (HBT) with self-aligned stacked metal/IDP (SMI) electrodes is proposed. The SiGe-base structure, self-aligned to the 0.1-μm-wide emitter, effectively reduces collector capacitance and SMI electrodes provide low parasitic resistances. A BPSG/SiO2-refilled trench was introduced to reduce the substrate capacitance. A 9.3-ps delay time in a differential ECL ring oscillator was achieved.",

author = "Katsuyoshi Washio and Eiji Ohue and Katsuya Oda and Masamichi Tanabe and Hiromi Shimamoto and Takahiro Onai",

year = "1997",

month = dec,

day = "1",

language = "English",

pages = "795--798",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1997 International Electron Devices Meeting ; Conference date: 07-12-1997 Through 10-12-1997",

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TY - JOUR

T1 - Selective-epitaxial SiGe HBT with SMI electrodes featuring 9.3-ps ECL-gate delay

AU - Washio, Katsuyoshi

AU - Ohue, Eiji

AU - Oda, Katsuya

AU - Tanabe, Masamichi

AU - Shimamoto, Hiromi

AU - Onai, Takahiro

PY - 1997/12/1

Y1 - 1997/12/1

N2 - A selective-epitaxial SiGe base heterojunction bipolar transistor (HBT) with self-aligned stacked metal/IDP (SMI) electrodes is proposed. The SiGe-base structure, self-aligned to the 0.1-μm-wide emitter, effectively reduces collector capacitance and SMI electrodes provide low parasitic resistances. A BPSG/SiO2-refilled trench was introduced to reduce the substrate capacitance. A 9.3-ps delay time in a differential ECL ring oscillator was achieved.

AB - A selective-epitaxial SiGe base heterojunction bipolar transistor (HBT) with self-aligned stacked metal/IDP (SMI) electrodes is proposed. The SiGe-base structure, self-aligned to the 0.1-μm-wide emitter, effectively reduces collector capacitance and SMI electrodes provide low parasitic resistances. A BPSG/SiO2-refilled trench was introduced to reduce the substrate capacitance. A 9.3-ps delay time in a differential ECL ring oscillator was achieved.

UR - http://www.scopus.com/inward/record.url?scp=84886448021&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84886448021&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:84886448021

SP - 795

EP - 798

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

T2 - 1997 International Electron Devices Meeting

Y2 - 7 December 1997 through 10 December 1997

ER -

Selective-epitaxial SiGe HBT with SMI electrodes featuring 9.3-ps ECL-gate delay

Abstract

ASJC Scopus subject areas

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