Abstract
A selective-epitaxial SiGe base heterojunction bipolar transistor (HBT) with self-aligned stacked metal/IDP (SMI) electrodes is proposed. The SiGe-base structure, self-aligned to the 0.1-μm-wide emitter, effectively reduces collector capacitance and SMI electrodes provide low parasitic resistances. A BPSG/SiO2-refilled trench was introduced to reduce the substrate capacitance. A 9.3-ps delay time in a differential ECL ring oscillator was achieved.
Original language | English |
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Pages (from-to) | 795-798 |
Number of pages | 4 |
Journal | Technical Digest - International Electron Devices Meeting, IEDM |
Publication status | Published - 1997 Dec 1 |
Externally published | Yes |
Event | 1997 International Electron Devices Meeting - Washington, DC, USA Duration: 1997 Dec 7 → 1997 Dec 10 |
ASJC Scopus subject areas
- Engineering(all)