A selective-epitaxial SiGe base heterojunction bipolar transistor (HBT) with self-aligned stacked metal/IDP (SMI) electrodes is proposed. The SiGe-base structure, self-aligned to the 0.1-μm-wide emitter, effectively reduces collector capacitance and SMI electrodes provide low parasitic resistances. A BPSG/SiO2-refilled trench was introduced to reduce the substrate capacitance. A 9.3-ps delay time in a differential ECL ring oscillator was achieved.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting, IEDM|
|Publication status||Published - 1997 Dec 1|
|Event||1997 International Electron Devices Meeting - Washington, DC, USA|
Duration: 1997 Dec 7 → 1997 Dec 10
ASJC Scopus subject areas