Selective-epitaxial SiGe HBT with SMI electrodes featuring 9.3-ps ECL-gate delay

Katsuyoshi Washio, Eiji Ohue, Katsuya Oda, Masamichi Tanabe, Hiromi Shimamoto, Takahiro Onai

Research output: Contribution to journalConference articlepeer-review

36 Citations (Scopus)

Abstract

A selective-epitaxial SiGe base heterojunction bipolar transistor (HBT) with self-aligned stacked metal/IDP (SMI) electrodes is proposed. The SiGe-base structure, self-aligned to the 0.1-μm-wide emitter, effectively reduces collector capacitance and SMI electrodes provide low parasitic resistances. A BPSG/SiO2-refilled trench was introduced to reduce the substrate capacitance. A 9.3-ps delay time in a differential ECL ring oscillator was achieved.

Original languageEnglish
Pages (from-to)795-798
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
Publication statusPublished - 1997 Dec 1
Externally publishedYes
Event1997 International Electron Devices Meeting - Washington, DC, USA
Duration: 1997 Dec 71997 Dec 10

ASJC Scopus subject areas

  • Engineering(all)

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