Selective epitaxial growth of silicon and germanium at low temperatures using ultraclean CVD processing

Junichi Murota, Manabu Kato, Nobuo Mikoshiba, Shoichi Ono

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)

Abstract

By ultraclean Si and Ge CVD processing using SiH4 and GeH4 gases, a drastic decrease of epitaxial growth temperature and an increase of selectivity between Si and Si oxide are obtained. Expressing the deposition rate by an equation similar to the Langmuir adsorption isotherm, it is proposed that the surface reaction proceeds at adsorption sites consisting of bonds on the surface. The SiH4 induces nucleation on the oxide. The nucleation is suppressed in the presence of GeH4 and on CVD BPSG compared with SiO2. As a result, 500nm-thick selective growth of Si at 850°C and Si-Ge alloy at 550°C could be realized. A perfect selective growth of Ge in via-holes shows that there are two epitaxial growth mechanisms, step-flow and dangling-bond dominated growth.

Original languageEnglish
Pages141-143
Number of pages3
Publication statusPublished - 1991 Jan 1
Event23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
Duration: 1991 Aug 271991 Aug 29

Other

Other23rd International Conference on Solid State Devices and Materials - SSDM '91
CityYokohama, Jpn
Period91/8/2791/8/29

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Selective epitaxial growth of silicon and germanium at low temperatures using ultraclean CVD processing'. Together they form a unique fingerprint.

Cite this