Selective dry etching of UV-nanoimprinted resin passivation masks for area selective atomic layer deposition of aluminum oxide

Chiaki Miyajima, Shunya Ito, Masaru Nakagawa

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


To demonstrate area selective atomic layer deposition (ALD) using UV-nanoimprinted resin patterns as physical passivation masks, we investigated the removal of UV-cured resin films subjected to sequential mutual doses of trimethylaluminum (TMA) and H2O by using dry etching procedures. On the basis of the removal of a residual layer characteristic from imprint resin patterns by anisotropic oxygen reactive ion etching (O2 RIE), oxidatively etched UV-cured films were modified with TMA and H2O in an ALD-like cyclic manner. Atomic force microscopy and time-of-flight secondary ion mass spectrometry [time-of-flight secondary ion mass spectrometry (TOF-SIMS)] analysis suggested that the combination of physical Ar ion milling and subsequent chemical O2 RIE enabled the elimination of oxidized UV-cured resin masks modified with 5-cycle TMA doses. By contrast, Ar ion milling or O2 RIE left organic or inorganic residues on silicon surfaces, respectively. A TMA-modified hybridized resin layer was etched by physical Ar ion milling; subsequently, the organic residual resin layer was removed by chemical O2 RIE in the case of 5-cycle modification with TMA. The mapping image of Al+ visualized by TOF-SIMS suggested that line patterns of aluminum oxide were left selectively on unmasked silicon substrate surfaces by site-selective dry etching of TMA-modified imprint resin passivation masks with 500 nm linewidth.

Original languageEnglish
Article number052804
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Issue number5
Publication statusPublished - 2021 Sept 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


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