Selective composition modification deposition utilizing ion bombardment-induced interfacial mixing during plasma-enhanced atomic layer deposition

Masaki Hirayama, Shigetoshi Sugawa

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

We investigated the effects of low-energy (<15 eV) ion bombardment on the properties of Al2O3 plasma-enhanced atomic layer deposition (ALD) films. High-flux ion bombardment caused interfacial mixing with underlying material of Si, and AlSiO x films were formed instead of Al2O3 films. The interfacially mixed AlSiO x films were selectively formed on single-crystal and amorphous Si surfaces, whereas normal ALD Al2O3 films were formed on SiO2 surfaces. The interfacially mixed AlSiO x films possessed thin (∼0.8 nm) SiO x interlayers and abrupt interfaces. The interfacial mixing synthesis has the potential to realize simultaneous area and topographically selective depositions in combination with selective etching.

Original languageEnglish
Article number110902
JournalJapanese journal of applied physics
Volume58
Issue number11
DOIs
Publication statusPublished - 2019

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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