Selection of rare earth silicate with SrO capping for EOT scaling below 0.5 nm

K. Kakushima, K. Okamoto, T. Koyanagi, K. Tachi, M. Kouda, T. Kawanago, J. Song, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Lwai

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    An aggressive EOT scaling with high-k gate dielectrics has been presented by selection of a rare earth silicate (La, Ce and Pr) as an interfacial layer with La2O3 stacking. Among silicates, La2O 3/Ce-silicate nFET has performed a small EOT of 0.51 nm with a reduced gate leakage current of 102 A/cm2. SrO capping further reduces the gate leakage current also with a smaller EOT with improved subthreshold slope. A guideline for EOT scaling using RE-silicate in combination with SrO capping is proposed.

    Original languageEnglish
    Title of host publicationESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference
    Pages403-406
    Number of pages4
    DOIs
    Publication statusPublished - 2009 Dec 1
    Event39th European Solid-State Device Research Conference, ESSDERC 2009 - Athens, Greece
    Duration: 2009 Sep 142009 Sep 18

    Publication series

    NameESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

    Other

    Other39th European Solid-State Device Research Conference, ESSDERC 2009
    CountryGreece
    CityAthens
    Period09/9/1409/9/18

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Safety Research

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  • Cite this

    Kakushima, K., Okamoto, K., Koyanagi, T., Tachi, K., Kouda, M., Kawanago, T., Song, J., Ahmet, P., Tsutsui, K., Sugii, N., Hattori, T., & Lwai, H. (2009). Selection of rare earth silicate with SrO capping for EOT scaling below 0.5 nm. In ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference (pp. 403-406). [5331331] (ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2009.5331331