Segregation of vanadium at the WC/Co interface in VC-doped WC-Co

A. Jaroenworaluck, T. Yamamoto, Y. Ikuhara, T. Sakuma, T. Taniuchi, K. Okada, T. Tanase

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    58 Citations (Scopus)

    Abstract

    Morphology of carbide grain in WC-12 wt. % Co-0.5 wt. % VC was examined by HREM and EDS with a special interest in the segregation of V at the WC/Co interfaces. A small addition of VC in WC-Co is effective to suppress the grain growth of carbide grains. HREM observation revealed that the WC/Co interfaces are faceted and consist of mainly two kinds of habit planes, (1010) and (0001), respectively. EDS analyses clearly showed the segregation of doped V along the interfaces. In addition, the concentration of segregated V is higher at the (0001) type habit plane than (1010) one. The retardation of the grain growth of carbide grains in the VC-doped WC-Co is closely related to the formation of the faceted WC/Co interface.

    Original languageEnglish
    Pages (from-to)2450-2452
    Number of pages3
    JournalJournal of Materials Research
    Volume13
    Issue number9
    DOIs
    Publication statusPublished - 1998 Sep

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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    Jaroenworaluck, A., Yamamoto, T., Ikuhara, Y., Sakuma, T., Taniuchi, T., Okada, K., & Tanase, T. (1998). Segregation of vanadium at the WC/Co interface in VC-doped WC-Co. Journal of Materials Research, 13(9), 2450-2452. https://doi.org/10.1557/JMR.1998.0341