Abstract
Morphology of carbide grain in WC-12 wt. % Co-0.5 wt. % VC was examined by HREM and EDS with a special interest in the segregation of V at the WC/Co interfaces. A small addition of VC in WC-Co is effective to suppress the grain growth of carbide grains. HREM observation revealed that the WC/Co interfaces are faceted and consist of mainly two kinds of habit planes, (1010) and (0001), respectively. EDS analyses clearly showed the segregation of doped V along the interfaces. In addition, the concentration of segregated V is higher at the (0001) type habit plane than (1010) one. The retardation of the grain growth of carbide grains in the VC-doped WC-Co is closely related to the formation of the faceted WC/Co interface.
Original language | English |
---|---|
Pages (from-to) | 2450-2452 |
Number of pages | 3 |
Journal | Journal of Materials Research |
Volume | 13 |
Issue number | 9 |
DOIs | |
Publication status | Published - 1998 Sep |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering