TY - JOUR
T1 - Segregation of vanadium at the WC/Co interface in VC-doped WC-Co
AU - Jaroenworaluck, A.
AU - Yamamoto, T.
AU - Ikuhara, Y.
AU - Sakuma, T.
AU - Taniuchi, T.
AU - Okada, K.
AU - Tanase, T.
N1 - Funding Information:
A part of this work was supported by Iketani Science and Technology Foundation and Kazato Research Foundation.
PY - 1998/9
Y1 - 1998/9
N2 - Morphology of carbide grain in WC-12 wt. % Co-0.5 wt. % VC was examined by HREM and EDS with a special interest in the segregation of V at the WC/Co interfaces. A small addition of VC in WC-Co is effective to suppress the grain growth of carbide grains. HREM observation revealed that the WC/Co interfaces are faceted and consist of mainly two kinds of habit planes, (1010) and (0001), respectively. EDS analyses clearly showed the segregation of doped V along the interfaces. In addition, the concentration of segregated V is higher at the (0001) type habit plane than (1010) one. The retardation of the grain growth of carbide grains in the VC-doped WC-Co is closely related to the formation of the faceted WC/Co interface.
AB - Morphology of carbide grain in WC-12 wt. % Co-0.5 wt. % VC was examined by HREM and EDS with a special interest in the segregation of V at the WC/Co interfaces. A small addition of VC in WC-Co is effective to suppress the grain growth of carbide grains. HREM observation revealed that the WC/Co interfaces are faceted and consist of mainly two kinds of habit planes, (1010) and (0001), respectively. EDS analyses clearly showed the segregation of doped V along the interfaces. In addition, the concentration of segregated V is higher at the (0001) type habit plane than (1010) one. The retardation of the grain growth of carbide grains in the VC-doped WC-Co is closely related to the formation of the faceted WC/Co interface.
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U2 - 10.1557/JMR.1998.0341
DO - 10.1557/JMR.1998.0341
M3 - Article
AN - SCOPUS:0032164930
VL - 13
SP - 2450
EP - 2452
JO - Journal of Materials Research
JF - Journal of Materials Research
SN - 0884-2914
IS - 9
ER -