Abstract
Segregation phenomenon of Ga in Czochralski (CZ)-Si crystal growth has been investigated. The effective segregation coefficient, keff, of Ga was obtained for different growth rates by assuming the simple relationship between the concentration of Ga in Si crystal and the bulk Ga concentration in melt. Applying BPS theory to effective segregation coefficients which is valid for the melt-solidified fraction up to 0.38, an equilibrium segregation coefficient of Ga was obtained, k0=0.0079.
Original language | English |
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Pages (from-to) | 338-340 |
Number of pages | 3 |
Journal | Journal of Crystal Growth |
Volume | 290 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2006 May 1 |
Keywords
- A1. Ga-doping
- A1. Segregation
- A2. Czochralski method
- A2. Si crystal
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry