Segregation of Ga during growth of Si single crystal

Takeshi Hoshikawa, Xinming Huang, Satoshi Uda, Toshinori Taishi

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Segregation phenomenon of Ga in Czochralski (CZ)-Si crystal growth has been investigated. The effective segregation coefficient, keff, of Ga was obtained for different growth rates by assuming the simple relationship between the concentration of Ga in Si crystal and the bulk Ga concentration in melt. Applying BPS theory to effective segregation coefficients which is valid for the melt-solidified fraction up to 0.38, an equilibrium segregation coefficient of Ga was obtained, k0=0.0079.

Original languageEnglish
Pages (from-to)338-340
Number of pages3
JournalJournal of Crystal Growth
Volume290
Issue number2
DOIs
Publication statusPublished - 2006 May 1

Keywords

  • A1. Ga-doping
  • A1. Segregation
  • A2. Czochralski method
  • A2. Si crystal

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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