Segregation of Ga during growth of Si single crystal

Takeshi Hoshikawa; Xinming Huang; Satoshi Uda; Toshinori Taishi

doi:10.1016/j.jcrysgro.2006.01.026

Segregation of Ga during growth of Si single crystal

Takeshi Hoshikawa, Xinming Huang, Satoshi Uda, Toshinori Taishi

Materials Development Division

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Segregation phenomenon of Ga in Czochralski (CZ)-Si crystal growth has been investigated. The effective segregation coefficient, k_eff, of Ga was obtained for different growth rates by assuming the simple relationship between the concentration of Ga in Si crystal and the bulk Ga concentration in melt. Applying BPS theory to effective segregation coefficients which is valid for the melt-solidified fraction up to 0.38, an equilibrium segregation coefficient of Ga was obtained, k₀=0.0079.

Original language	English
Pages (from-to)	338-340
Number of pages	3
Journal	Journal of Crystal Growth
Volume	290
Issue number	2
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.01.026
Publication status	Published - 2006 May 1

Keywords

A1. Ga-doping
A1. Segregation
A2. Czochralski method
A2. Si crystal

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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title = "Segregation of Ga during growth of Si single crystal",

abstract = "Segregation phenomenon of Ga in Czochralski (CZ)-Si crystal growth has been investigated. The effective segregation coefficient, keff, of Ga was obtained for different growth rates by assuming the simple relationship between the concentration of Ga in Si crystal and the bulk Ga concentration in melt. Applying BPS theory to effective segregation coefficients which is valid for the melt-solidified fraction up to 0.38, an equilibrium segregation coefficient of Ga was obtained, k0=0.0079.",

keywords = "A1. Ga-doping, A1. Segregation, A2. Czochralski method, A2. Si crystal",

author = "Takeshi Hoshikawa and Xinming Huang and Satoshi Uda and Toshinori Taishi",

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language = "English",

volume = "290",

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TY - JOUR

T1 - Segregation of Ga during growth of Si single crystal

AU - Hoshikawa, Takeshi

AU - Huang, Xinming

AU - Uda, Satoshi

AU - Taishi, Toshinori

PY - 2006/5/1

Y1 - 2006/5/1

N2 - Segregation phenomenon of Ga in Czochralski (CZ)-Si crystal growth has been investigated. The effective segregation coefficient, keff, of Ga was obtained for different growth rates by assuming the simple relationship between the concentration of Ga in Si crystal and the bulk Ga concentration in melt. Applying BPS theory to effective segregation coefficients which is valid for the melt-solidified fraction up to 0.38, an equilibrium segregation coefficient of Ga was obtained, k0=0.0079.

AB - Segregation phenomenon of Ga in Czochralski (CZ)-Si crystal growth has been investigated. The effective segregation coefficient, keff, of Ga was obtained for different growth rates by assuming the simple relationship between the concentration of Ga in Si crystal and the bulk Ga concentration in melt. Applying BPS theory to effective segregation coefficients which is valid for the melt-solidified fraction up to 0.38, an equilibrium segregation coefficient of Ga was obtained, k0=0.0079.

KW - A1. Ga-doping

KW - A1. Segregation

KW - A2. Czochralski method

KW - A2. Si crystal

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DO - 10.1016/j.jcrysgro.2006.01.026

M3 - Article

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VL - 290

SP - 338

EP - 340

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

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