Segregation of boron in germanium crystal

T. Taishi, Y. Murao, Y. Ohno, I. Yonenaga

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

A heavily boron (B)-doped germanium (Ge) bulk crystal was grown by the Czochralski method. The B concentrations in the crystal were evaluated by measuring the carrier concentration with the Hall effect and resistance method. Maximum solubility of B into Ge was estimated to be 2.5×1018 cm-3. The equilibrium segregation coefficient of B in Ge was considered to be 5-6, much smaller than that reported previously.

Original languageEnglish
Pages (from-to)59-61
Number of pages3
JournalJournal of Crystal Growth
Volume311
Issue number1
DOIs
Publication statusPublished - 2008 Dec 15

Keywords

  • A1. Crystal growth
  • A1. Segregation
  • A2. Czochralski method
  • B1. Germanium

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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