Segregation during the seeding process in the Czochralski growth of GeSi alloys

I. Yonenaga, Y. Murakami

Research output: Contribution to journalArticlepeer-review

33 Citations (Scopus)

Abstract

The hetero-seeding and segregation processes in the growth of bulk crystals of GeSi alloys by the Czochralski method were investigated. Full single crystals were obtained from a melt of low Si content GeSi or pure Ge by using a Si seed while crystals grown by using a Ge seed became polycrystalline in the early stage of growth. The abrupt and gradual transition of the compositions from the Si and Ge seeds, respectively, to the grown alloy crystals were detected by means of energy dispersive X-ray spectroscopy. Segregation during the growth initiation process is discussed in terms of the unstable solidification of the growth using a Ge seed.

Original languageEnglish
Pages (from-to)399-404
Number of pages6
JournalJournal of Crystal Growth
Volume191
Issue number3
DOIs
Publication statusPublished - 1998 Jul 15

Keywords

  • Constitutional supercooling
  • Czochralski growth
  • Gesi
  • Hetero-seeding
  • Segregation

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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