Seeded growth of GaN single crystals by Na flux method using Na vapor

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    Abstract

    The seeded growth of GaN single crystals was performed at 780°a N 2 pressure of 5 MPa by the Na flux method using Na vapor. Transparent crystals were grown on prismatic GaN seed crystals in a Na-Ga melt. The thickness of the crystals grown on the seeds by heating for 400h was approximately 150 μm in the directions perpendicular to the prismatic and pyramidal planes, implying a growth rate of at least U.4 μm/h.

    Original languageEnglish
    Pages (from-to)L898-L900
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Volume45
    Issue number33-36
    DOIs
    Publication statusPublished - 2006 Aug 25

    Keywords

    • GaN
    • Na flux method
    • Na vapor
    • Seeded growth
    • Single crystal growth

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy (miscellaneous)
    • Physics and Astronomy(all)

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