Seeded growth of GaN single crystals by Na flux method using Na vapor

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Abstract

The seeded growth of GaN single crystals was performed at 780°a N 2 pressure of 5 MPa by the Na flux method using Na vapor. Transparent crystals were grown on prismatic GaN seed crystals in a Na-Ga melt. The thickness of the crystals grown on the seeds by heating for 400h was approximately 150 μm in the directions perpendicular to the prismatic and pyramidal planes, implying a growth rate of at least U.4 μm/h.

Original languageEnglish
Pages (from-to)L898-L900
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume45
Issue number33-36
DOIs
Publication statusPublished - 2006 Aug 25

Keywords

  • GaN
  • Na flux method
  • Na vapor
  • Seeded growth
  • Single crystal growth

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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