TY - GEN
T1 - SEED SHAPE DEPENDENCE OF Si SOLID PHASE EPITAXY.
AU - Murakami, Eiichi
AU - Moniwa, Masahiro
AU - Kusukawa, Kikuo
AU - Miyao, Masanobu
AU - Warabisako, Terunori
AU - Wada, Yasuo
PY - 1987/12/1
Y1 - 1987/12/1
N2 - A new facet formation mode in Si lateral solid phase epitaxy (L-SPE) of amorphous Si on SiO//2 is presented. This mode occurs in the case of L-SPE using a two-dimensional seed area. Depending on whether the seed shape is convex or concave, a slowly growing left brace 111 right brace facet or a fast growing left brace 110 right brace facet dominates in the case of left brace 100 right brace Si substrate. This phenomenon can be explained using a microscopic model of crystallization. Similar results are obtained for seeds surrounded by an SiO//2 layer and seeds surrounding an SiO//2 island, which have to be taken into consideration in practical device design.
AB - A new facet formation mode in Si lateral solid phase epitaxy (L-SPE) of amorphous Si on SiO//2 is presented. This mode occurs in the case of L-SPE using a two-dimensional seed area. Depending on whether the seed shape is convex or concave, a slowly growing left brace 111 right brace facet or a fast growing left brace 110 right brace facet dominates in the case of left brace 100 right brace Si substrate. This phenomenon can be explained using a microscopic model of crystallization. Similar results are obtained for seeds surrounded by an SiO//2 layer and seeds surrounding an SiO//2 island, which have to be taken into consideration in practical device design.
UR - http://www.scopus.com/inward/record.url?scp=0023531068&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0023531068&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0023531068
SN - 4930813212
T3 - Conference on Solid State Devices and Materials
SP - 183
EP - 186
BT - Conference on Solid State Devices and Materials
PB - Japan Soc of Applied Physics
ER -