Eiichi Murakami, Masahiro Moniwa, Kikuo Kusukawa, Masanobu Miyao, Terunori Warabisako, Yasuo Wada

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Citations (Scopus)


    A new facet formation mode in Si lateral solid phase epitaxy (L-SPE) of amorphous Si on SiO//2 is presented. This mode occurs in the case of L-SPE using a two-dimensional seed area. Depending on whether the seed shape is convex or concave, a slowly growing left brace 111 right brace facet or a fast growing left brace 110 right brace facet dominates in the case of left brace 100 right brace Si substrate. This phenomenon can be explained using a microscopic model of crystallization. Similar results are obtained for seeds surrounded by an SiO//2 layer and seeds surrounding an SiO//2 island, which have to be taken into consideration in practical device design.

    Original languageEnglish
    Title of host publicationConference on Solid State Devices and Materials
    PublisherJapan Soc of Applied Physics
    Number of pages4
    ISBN (Print)4930813212
    Publication statusPublished - 1987 Dec 1

    Publication series

    NameConference on Solid State Devices and Materials

    ASJC Scopus subject areas

    • Engineering(all)

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