SEED SHAPE DEPENDENCE OF Si SOLID PHASE EPITAXY.

Eiichi Murakami, Masahiro Moniwa, Kikuo Kusukawa, Masanobu Miyao, Terunori Warabisako, Yasuo Wada

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Citations (Scopus)

    Abstract

    A new facet formation mode in Si lateral solid phase epitaxy (L-SPE) of amorphous Si on SiO//2 is presented. This mode occurs in the case of L-SPE using a two-dimensional seed area. Depending on whether the seed shape is convex or concave, a slowly growing left brace 111 right brace facet or a fast growing left brace 110 right brace facet dominates in the case of left brace 100 right brace Si substrate. This phenomenon can be explained using a microscopic model of crystallization. Similar results are obtained for seeds surrounded by an SiO//2 layer and seeds surrounding an SiO//2 island, which have to be taken into consideration in practical device design.

    Original languageEnglish
    Title of host publicationConference on Solid State Devices and Materials
    PublisherJapan Soc of Applied Physics
    Pages183-186
    Number of pages4
    ISBN (Print)4930813212
    Publication statusPublished - 1987 Dec 1

    Publication series

    NameConference on Solid State Devices and Materials

    ASJC Scopus subject areas

    • Engineering(all)

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