SEED SHAPE DEPENDENCE OF Si SOLID PHASE EPITAXY.

Eiichi Murakami; Masahiro Moniwa; Kikuo Kusukawa; Masanobu Miyao; Terunori Warabisako; Yasuo Wada

SEED SHAPE DEPENDENCE OF Si SOLID PHASE EPITAXY.

Eiichi Murakami, Masahiro Moniwa, Kikuo Kusukawa, Masanobu Miyao, Terunori Warabisako, Yasuo Wada

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A new facet formation mode in Si lateral solid phase epitaxy (L-SPE) of amorphous Si on SiO//2 is presented. This mode occurs in the case of L-SPE using a two-dimensional seed area. Depending on whether the seed shape is convex or concave, a slowly growing left brace 111 right brace facet or a fast growing left brace 110 right brace facet dominates in the case of left brace 100 right brace Si substrate. This phenomenon can be explained using a microscopic model of crystallization. Similar results are obtained for seeds surrounded by an SiO//2 layer and seeds surrounding an SiO//2 island, which have to be taken into consideration in practical device design.

Original language	English
Title of host publication	Conference on Solid State Devices and Materials
Publisher	Japan Soc of Applied Physics
Pages	183-186
Number of pages	4
ISBN (Print)	4930813212
Publication status	Published - 1987 Dec 1

Publication series

Name	Conference on Solid State Devices and Materials

ASJC Scopus subject areas

Engineering(all)

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SEED SHAPE DEPENDENCE OF Si SOLID PHASE EPITAXY. / Murakami, Eiichi; Moniwa, Masahiro; Kusukawa, Kikuo; Miyao, Masanobu; Warabisako, Terunori; Wada, Yasuo.

Conference on Solid State Devices and Materials. Japan Soc of Applied Physics, 1987. p. 183-186 (Conference on Solid State Devices and Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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title = "SEED SHAPE DEPENDENCE OF Si SOLID PHASE EPITAXY.",

abstract = "A new facet formation mode in Si lateral solid phase epitaxy (L-SPE) of amorphous Si on SiO//2 is presented. This mode occurs in the case of L-SPE using a two-dimensional seed area. Depending on whether the seed shape is convex or concave, a slowly growing left brace 111 right brace facet or a fast growing left brace 110 right brace facet dominates in the case of left brace 100 right brace Si substrate. This phenomenon can be explained using a microscopic model of crystallization. Similar results are obtained for seeds surrounded by an SiO//2 layer and seeds surrounding an SiO//2 island, which have to be taken into consideration in practical device design.",

author = "Eiichi Murakami and Masahiro Moniwa and Kikuo Kusukawa and Masanobu Miyao and Terunori Warabisako and Yasuo Wada",

year = "1987",

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language = "English",

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series = "Conference on Solid State Devices and Materials",

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T1 - SEED SHAPE DEPENDENCE OF Si SOLID PHASE EPITAXY.

AU - Murakami, Eiichi

AU - Moniwa, Masahiro

AU - Kusukawa, Kikuo

AU - Miyao, Masanobu

AU - Warabisako, Terunori

AU - Wada, Yasuo

PY - 1987/12/1

Y1 - 1987/12/1

N2 - A new facet formation mode in Si lateral solid phase epitaxy (L-SPE) of amorphous Si on SiO//2 is presented. This mode occurs in the case of L-SPE using a two-dimensional seed area. Depending on whether the seed shape is convex or concave, a slowly growing left brace 111 right brace facet or a fast growing left brace 110 right brace facet dominates in the case of left brace 100 right brace Si substrate. This phenomenon can be explained using a microscopic model of crystallization. Similar results are obtained for seeds surrounded by an SiO//2 layer and seeds surrounding an SiO//2 island, which have to be taken into consideration in practical device design.

AB - A new facet formation mode in Si lateral solid phase epitaxy (L-SPE) of amorphous Si on SiO//2 is presented. This mode occurs in the case of L-SPE using a two-dimensional seed area. Depending on whether the seed shape is convex or concave, a slowly growing left brace 111 right brace facet or a fast growing left brace 110 right brace facet dominates in the case of left brace 100 right brace Si substrate. This phenomenon can be explained using a microscopic model of crystallization. Similar results are obtained for seeds surrounded by an SiO//2 layer and seeds surrounding an SiO//2 island, which have to be taken into consideration in practical device design.

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M3 - Conference contribution

AN - SCOPUS:0023531068

SN - 4930813212

T3 - Conference on Solid State Devices and Materials

SP - 183

EP - 186

BT - Conference on Solid State Devices and Materials

PB - Japan Soc of Applied Physics

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