Se-substitution effect on Yb4As3

Makoto Shirakawa, Masahiro Ona, Yukihiro Sakai, Akira Ochiai

Research output: Contribution to journalConference articlepeer-review

Abstract

To clarify transport properties of the low carrier concentration system Yb4As3 in more detail, we prepared single crystals of Yb4(As1-xSex)3 (x = 0.01, 0.05). We expected substituting Se for As to dope electrons into the system. The result of X-ray powder diffraction and magnetic susceptibility measurements indicates that substituting Se may cause a valence change from Yb3+ into Yb2+.

Original languageEnglish
Pages (from-to)365-366
Number of pages2
JournalPhysica B: Condensed Matter
Volume312-313
DOIs
Publication statusPublished - 2002 Mar
EventInternational Conference on Strongly Correlated Electrons - Ann Arbor, MI, United States
Duration: 2002 Aug 62002 Aug 6

Keywords

  • Charge ordering
  • Low carrier concentration system
  • Yb(AsSe)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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