静的純ねじり試験によるシリコントーションバーの破壊強度向上法の探索

Translated title of the contribution: Screening of process factors for silicon torsional bar by static pure torsion destructive test

Yukio Suzuki, Eiki Ohyanagi, Hirofumi Chiba, Kosuke Hikichi, Toshiya Kojima, Yoshiaki Kanamori, Shuji Tanaka

Research output: Contribution to journalArticlepeer-review

Abstract

Static pure torsion fracture tester for silicon torsional bar was developed. Screening of process factor for silicon torsional bar by static pure torsion destructive test was demonstrated. Planarization of Deep RIE process surface by chemical dry etch (CDE) shows improvement for torsion fracture angle. Reducing surface crystal defect in Deep RIE process surface by hydrogen anneal shows significant improvement in torsion fracture angle.

Translated title of the contributionScreening of process factors for silicon torsional bar by static pure torsion destructive test
Original languageJapanese
Pages (from-to)285-292
Number of pages8
JournalIEEJ Transactions on Sensors and Micromachines
Volume140
Issue number10
DOIs
Publication statusPublished - 2020 Oct 1

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering

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