Static pure torsion fracture tester for silicon torsional bar was developed. Screening of process factor for silicon torsional bar by static pure torsion destructive test was demonstrated. Planarization of Deep RIE process surface by chemical dry etch (CDE) shows improvement for torsion fracture angle. Reducing surface crystal defect in Deep RIE process surface by hydrogen anneal shows significant improvement in torsion fracture angle.
|Translated title of the contribution||Screening of process factors for silicon torsional bar by static pure torsion destructive test|
|Number of pages||8|
|Journal||IEEJ Transactions on Sensors and Micromachines|
|Publication status||Published - 2020 Oct 1|
ASJC Scopus subject areas
- Mechanical Engineering
- Electrical and Electronic Engineering