Screening charge localization at LiNbO3 surface with Schottky junction

Takahiro Nagata, Toyohiro Chikyow, Kenji Kitamura

Research output: Contribution to journalArticlepeer-review

Abstract

Screening charge localization was demonstrated by using a Schottky contact with LiNbO3 (LN). A Cr/LN stack structure with a 2 μm diameter hole array penetrating the Cr layer localized the screening charge of LN in the hole, although the Al/LN stack structure exhibited no surface charge localization behavior. X-ray photoelectron spectroscopy revealed that Cr formed a Schottky contact with LN, which prevents the screening charge from escaping from the hole arrays. The screening charge localization was enhanced by inserting SiO2 between the metal and LN, which moved the position of the Fermi level to mid gap.

Original languageEnglish
Article number171604
JournalApplied Physics Letters
Volume108
Issue number17
DOIs
Publication statusPublished - 2016 Apr 25
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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