Scintillation properties of Ce doped Gd 2Lu 1(Ga,Al) 5O 12 single crystal grown by the micro-pulling-down method

Kei Kamada, Takayuki Yanagida, Jan Pejchal, Martin Nikl, Takanori Endo, Kousuke Tsutsumi, Yoshiyuki Usuki, Yutaka Fujimoto, Akihiro Fukabori, Akira Yoshikawa

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17 Citations (Scopus)

Abstract

Ce:Gd 2Lu 1(Ga,Al) 5O 12 single crystals were grown by the micro-pulling down (μ-PD) method. All grown crystals were yellow and transparent with 3.0 mm in diameter, 15-30 mm in length. Neither visible inclusions nor cracks were observed. Luminescence and scintillation properties were measured. The substitution at the Al 3+ sites by Ga 3+ and at the Lu 3+ sites by Gd 3+ in garnet structure has been studied. In these crystals, Ce 3+ 4f-5d emission is observed with 500-530 nm wavelength. The decay accelerates with increasing Ga and Ce concentration. Ce1%: Gd 2Lu 1Ga 3Al 2O 12 shows the highest emission intensity. The light yield of Ce:Gd 2Lu 1Ga 3Al 2O 12 sample with 3 mmφ×1 mm size was around 22,000 photon/MeV using calibration from 55Fe direct irradiation peak to APD. Scintillation decay time was around 50 ns. The theoretical density is 6.88 g/cm 3.

Original languageEnglish
Pages (from-to)35-38
Number of pages4
JournalJournal of Crystal Growth
Volume352
Issue number1
DOIs
Publication statusPublished - 2012 Aug 1

Keywords

  • A2. Single crystal growth
  • B1.Oxides
  • B2. Scintillator materials
  • B3. Scintillators

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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