Scintillation characteristic of in,Ga-Doped ZnO thin films with different dopant concentrations

Yutaka Fujimoto, Takayuki Yanagida, Hideyuki Sekiwa, Yuui Yokota, Valery Chani, Akira Yoshikawa

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

The present study describes the first detailed evaluation of the rise and the decay time of scintillation phenomenon in In3+- and Ga3+-doped ZnO thin films with different dopant concentrations. In3+-(25, 55, and 141 ppm) and Ga3+-(33, 67, 333, and 1374 ppm) dopedZnO films were grown by the Liquid Phase Epitaxy (LPE) method. The characterization was performed using the pulse X-ray equipped streak camera system. Both the rise and the decay times were shortened considerably with increasing content of In3+ and Ga 3+ in the films. However, the scintillation light yield under 241Am -ray excitation reduced when concentration of In3+ and Ga 3+ in the ZnO films was high.

Original languageEnglish
Article number01BG04
JournalJapanese journal of applied physics
Volume50
Issue number1 PART 3
DOIs
Publication statusPublished - 2011 Jan

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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