Schottky metal library for ZNO-based UV photodiode fabricated by the combinatorial ion beam-assisted deposition

T. Nagata, P. Ahmet, Y. Z. Yoo, K. Yamada, K. Tsutsui, Y. Wada, T. Chikyow

Research output: Contribution to journalConference articlepeer-review

28 Citations (Scopus)


A binary alloy Schottky barrier diode on zinc oxide (ZnO) was developed using the combinatorial ion beam-assisted deposition system. The compositional fraction of the binary alloy was continuously varied using the composition-spread technique, to control the Schottky barrier height. After metal deposition, patterned Schottky diodes were fabricated on a ZnO single-crystal substrate. Pt-Ru alloy was selected from the work function viewpoint. Our experiments showed that the compositional fraction of the Schottky binary alloys changed continuously as designed and the Schottky barrier heights measured by current-voltage (I-V) measurements increased with increasing Pt content. Maximum barrier height difference for ZnO was 137 meV. Using ion beam deposition in parallel with the combinatorial system showed that the Schottky barrier heights for ZnO can be controlled by binary metal alloying.

Original languageEnglish
Pages (from-to)2503-2506
Number of pages4
JournalApplied Surface Science
Issue number7
Publication statusPublished - 2006 Jan 21
Externally publishedYes
EventProceedings of the Third Japan-US Workshop on Combinatorial Material Science and Technology CMST-e SI -
Duration: 2004 Dec 72004 Dec 10


  • Ion beam deposition
  • Photodiode
  • Schottky
  • Zno

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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