Schottky-limit barrier heights for CO-coated metal clusters on GaAs(110)

T. Komeda, F. Stepniak, J. H. Weaver

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

This letter discusses band bending induced by the deposition of metal clusters coated with onto GaAs(110). The layer of CO between the metallic clusters and the undisrupted semiconductor simulates a metal-insulator- semiconductor junction. The observed barrier height shows Schottky-limit-like dependence on the work function of the metal.

Original languageEnglish
Pages (from-to)2809-2811
Number of pages3
JournalApplied Physics Letters
Volume58
Issue number24
DOIs
Publication statusPublished - 1991 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Schottky-limit barrier heights for CO-coated metal clusters on GaAs(110)'. Together they form a unique fingerprint.

  • Cite this