Abstract
A microboron-doped diamond Schottky emitter fabricated for microelectron sources was described. The diamond emitter was used with a integrated heating element, which was fabricated using selective diamond deposition and silicon molding techniques. Due to the low threshold electric field of the emitter, a large emission current of 800 nA with high brightness and high stability was achieved from the emitter. The mechanical strength of the diamond was found to provide resistance against the ion bombardment.
| Original language | English |
|---|---|
| Pages (from-to) | 1349-1352 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 22 |
| Issue number | 3 |
| Publication status | Published - 2004 May 1 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Bae, J. H., Minh, P. N., Ono, T., & Esashi, M. (2004). Schottky emitter using boron-doped diamond. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 22(3), 1349-1352.