Schottky emitter using boron-doped diamond

Joon Hyung Bae, Phan Ngoc Minh, Takahito Ono, Masayoshi Esashi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A microboron-doped diamond Schottky emitter fabricated for microelectron sources was described. The diamond emitter was used with a integrated heating element, which was fabricated using selective diamond deposition and silicon molding techniques. Due to the low threshold electric field of the emitter, a large emission current of 800 nA with high brightness and high stability was achieved from the emitter. The mechanical strength of the diamond was found to provide resistance against the ion bombardment.

Original languageEnglish
Pages (from-to)1349-1352
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number3
Publication statusPublished - 2004 May 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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