Schottky emitter using boron-doped diamond

Joon Hyung Bae; Phan Ngoc Minh; Takahito Ono; Masayoshi Esashi

doi:10.1116/1.1736640

Schottky emitter using boron-doped diamond

Joon Hyung Bae, Phan Ngoc Minh, Takahito Ono, Masayoshi Esashi

ENG - Mechanical Systems Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A microboron-doped diamond Schottky emitter fabricated for microelectron sources was described. The diamond emitter was used with a integrated heating element, which was fabricated using selective diamond deposition and silicon molding techniques. Due to the low threshold electric field of the emitter, a large emission current of 800 nA with high brightness and high stability was achieved from the emitter. The mechanical strength of the diamond was found to provide resistance against the ion bombardment.

Original language	English
Pages (from-to)	1349-1352
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	22
Issue number	3
DOIs	https://doi.org/10.1116/1.1736640
Publication status	Published - 2004

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1736640

Cite this

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title = "Schottky emitter using boron-doped diamond",

abstract = "A microboron-doped diamond Schottky emitter fabricated for microelectron sources was described. The diamond emitter was used with a integrated heating element, which was fabricated using selective diamond deposition and silicon molding techniques. Due to the low threshold electric field of the emitter, a large emission current of 800 nA with high brightness and high stability was achieved from the emitter. The mechanical strength of the diamond was found to provide resistance against the ion bombardment.",

author = "Bae, {Joon Hyung} and Minh, {Phan Ngoc} and Takahito Ono and Masayoshi Esashi",

year = "2004",

doi = "10.1116/1.1736640",

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TY - JOUR

T1 - Schottky emitter using boron-doped diamond

AU - Bae, Joon Hyung

AU - Minh, Phan Ngoc

AU - Ono, Takahito

AU - Esashi, Masayoshi

PY - 2004

Y1 - 2004

N2 - A microboron-doped diamond Schottky emitter fabricated for microelectron sources was described. The diamond emitter was used with a integrated heating element, which was fabricated using selective diamond deposition and silicon molding techniques. Due to the low threshold electric field of the emitter, a large emission current of 800 nA with high brightness and high stability was achieved from the emitter. The mechanical strength of the diamond was found to provide resistance against the ion bombardment.

AB - A microboron-doped diamond Schottky emitter fabricated for microelectron sources was described. The diamond emitter was used with a integrated heating element, which was fabricated using selective diamond deposition and silicon molding techniques. Due to the low threshold electric field of the emitter, a large emission current of 800 nA with high brightness and high stability was achieved from the emitter. The mechanical strength of the diamond was found to provide resistance against the ion bombardment.

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DO - 10.1116/1.1736640

M3 - Article

AN - SCOPUS:3242687102

VL - 22

SP - 1349

EP - 1352

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 3

ER -

Schottky emitter using boron-doped diamond

Abstract

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