Schottky-Barrier Properties of Nearly-Ideal (N ≃1) Al Contacts on MBE- and Heat Cleaned-Gaas Surfaces

Hiroyuki Sakaki, Yoshinobu Sekiguchi, Dian Chao Sun, Mitsuhiro Taniguchi, Hideo Ohno, Akihiro Tanaica

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Aluminum films were deposited in ultra-high vacuum onto heat-cleaned-surfaces as well as oxygen-free MBE surfaces of (100) GaAs to form Schottky barriers with and without intervening oxide layers. The measured ideality factor n was close to unity (nç1.02ç1.10) irrespective of the oxide thickness tox, indicating the transport being dominated by thermionic emission processes. In contrast, the barrier height decreased systematically from 0.89 eV to 0.67 eV, as toxis reduced, suggesting the presence of negatively charged centers (≃1012/cm2) at GaAs/oxide interfaces.

Original languageEnglish
Pages (from-to)L107-L110
JournalJapanese journal of applied physics
Volume20
Issue number2
DOIs
Publication statusPublished - 1981 Feb
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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