Schottky barrier inhomogeneity at Au/Si(111) interfaces investigated using ultrahigh-vacuum ballistic electron emission microscopy

Touru Sumiya, Tadao Miura, Haruko Fujinuma, Shun Ichiro Tanaka

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Ultrahigh-vacuum ballistic electron emission microscopy (UHV-BEEM) has been used to study the electron transport across Au/n-type Si(111) interfaces. A BEEM image revealed that an Au film deposited at about 130°C included regions in which the BEEM current was significantly reduced. The ballistic transmissivity across the Au/Si(111) interface was found to be markedly reduced in these regions. Post-annealing of the sample at 300°C in UHV resulted in the absence of ballistic transmissivity throughout the sample. This indicated that the Au-Si alloy formed at the interface scattered the ballistic electrons strongly. We attribute the appearance of the regions to the formation of the Au-Si alloy at the Au/Si interface. We further demonstrate that the growth of Au on a clean Si(111) surface took place in a layer-by-layer fashion at room temperature. The BEEM measurements indicated the formation of a homogeneous interface without regions with reduced ballistic transmissivity.

Original languageEnglish
Pages (from-to)329-333
Number of pages5
JournalApplied Surface Science
Volume117-118
DOIs
Publication statusPublished - 1997 Jun 2
Externally publishedYes

Keywords

  • Ballistic electron microscopy
  • Gold
  • Interdiffusion
  • STM
  • Schottky barrier
  • Silicon

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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