Abstract
Ultrahigh-vacuum ballistic electron emission microscopy (UHV-BEEM) has been used to study the electron transport across Au/n-type Si(111) interfaces. A BEEM image revealed that an Au film deposited at about 130°C included regions in which the BEEM current was significantly reduced. The ballistic transmissivity across the Au/Si(111) interface was found to be markedly reduced in these regions. Post-annealing of the sample at 300°C in UHV resulted in the absence of ballistic transmissivity throughout the sample. This indicated that the Au-Si alloy formed at the interface scattered the ballistic electrons strongly. We attribute the appearance of the regions to the formation of the Au-Si alloy at the Au/Si interface. We further demonstrate that the growth of Au on a clean Si(111) surface took place in a layer-by-layer fashion at room temperature. The BEEM measurements indicated the formation of a homogeneous interface without regions with reduced ballistic transmissivity.
| Original language | English |
|---|---|
| Pages (from-to) | 329-333 |
| Number of pages | 5 |
| Journal | Applied Surface Science |
| Volume | 117-118 |
| DOIs | |
| Publication status | Published - 1997 Jun 2 |
| Externally published | Yes |
Keywords
- Ballistic electron microscopy
- Gold
- Interdiffusion
- STM
- Schottky barrier
- Silicon
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films