Schottky-barrier-height modulation of Ni silicide/Si contacts by insertion of thin Er or Pt layers

Yoshihisa Ohishi, Kohei Noguchi, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new Schottky barrier height (Φb) modulation method for Ni silicide/Si contacts was proposed. A thin metal layer (Er or Pt of 0.9-3.6nm thick) was inserted between Si (100) substrate and Ni layer (lOOnm) before the silicidation annealing. In the case of Er insertion, the <î>b for electrons decreased by 0.03-0.12eV in the annealing temperature range of 300-800°C, compared to that of Ni suicide without the Er insertion. In the case of Pt insertion, the Φb for hole decreased by 0.08-0.2eV in the annealing temperature range of 300-700°C N-channel Schottky barrier source/drain MOSFETs were successfully fabricated using the Er insertion technique.

Original languageEnglish
Title of host publicationSemiconductor Technology, ISTC 2008 - Proceedings of the 7th International Conference on Semiconductor Technology
Pages459-462
Number of pages4
Publication statusPublished - 2008
Externally publishedYes
Event7th International Conference on Semiconductor Technology, ISTC 2008 - Shanghai, China
Duration: 2008 Mar 152008 Mar 17

Publication series

NameProceedings - Electrochemical Society
VolumePV 2008-1

Other

Other7th International Conference on Semiconductor Technology, ISTC 2008
CountryChina
CityShanghai
Period08/3/1508/3/17

Keywords

  • Erbium
  • Ni suicide
  • Platinum
  • Schottky barrier (SB)

ASJC Scopus subject areas

  • Electrochemistry

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