Schottky barrier height modulation by Er insertion and its application to SB-MOSFETs

K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. N. Chandorkar, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We investigated the modulation of Schottky barrier height (Φb) of Ni silicide by inserting an Er layer between Si (100) substrate and Ni layer before silicidation annealing. Φb for electrons of NiSi was found to be decreased by using this technique. The n-channel SB-MOSFETs with source/drain contacts formed by this technique were fabricated and effects of the barrier lowering was observed on the transistor characteristics.

Original languageEnglish
Title of host publicationECS Transactions - Solid State - General - 214th ECS Meeting/RRiME 2008
Pages29-34
Number of pages6
Edition40
DOIs
Publication statusPublished - 2009
Externally publishedYes
EventSolid State - General - 214th ECS Meeting/RRiME 2008 - Honolulu, HI, United States
Duration: 2008 Oct 122008 Oct 17

Publication series

NameECS Transactions
Number40
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSolid State - General - 214th ECS Meeting/RRiME 2008
CountryUnited States
CityHonolulu, HI
Period08/10/1208/10/17

ASJC Scopus subject areas

  • Engineering(all)

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