Schottky barrier height modulation by Er insertion and its application to SB-MOSFETs

K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. N. Chandorkar, T. Hattori, H. Iwai

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    We investigated the modulation of Schottky barrier height (Φb) of Ni silicide by inserting an Er layer between Si (100) substrate and Ni layer before silicidation annealing. Φb for electrons of NiSi was found to be decreased by using this technique. The n-channel SB-MOSFETs with source/drain contacts formed by this technique were fabricated and effects of the barrier lowering was observed on the transistor characteristics.

    Original languageEnglish
    Title of host publicationECS Transactions - Solid State - General - 214th ECS Meeting/RRiME 2008
    Pages29-34
    Number of pages6
    Edition40
    DOIs
    Publication statusPublished - 2009 Nov 23
    EventSolid State - General - 214th ECS Meeting/RRiME 2008 - Honolulu, HI, United States
    Duration: 2008 Oct 122008 Oct 17

    Publication series

    NameECS Transactions
    Number40
    Volume16
    ISSN (Print)1938-5862
    ISSN (Electronic)1938-6737

    Other

    OtherSolid State - General - 214th ECS Meeting/RRiME 2008
    CountryUnited States
    CityHonolulu, HI
    Period08/10/1208/10/17

    ASJC Scopus subject areas

    • Engineering(all)

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  • Cite this

    Noguchi, K., Hosoda, W., Matano, K., Kakushima, K., Ahmet, P., Tsutsui, K., Sugii, N., Chandorkar, A. N., Hattori, T., & Iwai, H. (2009). Schottky barrier height modulation by Er insertion and its application to SB-MOSFETs. In ECS Transactions - Solid State - General - 214th ECS Meeting/RRiME 2008 (40 ed., pp. 29-34). (ECS Transactions; Vol. 16, No. 40). https://doi.org/10.1149/1.3108351