Schottky barrier height in Fe/GaAs films

L. R. Fleet, K. Yoshida, H. Kobayashi, Y. Ohno, H. Kurebayashi, J. Y. Kim, C. H.W. Barnes, A. Hirohata

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

We discuss the effect of annealing on the interfacial structure of Fe/GaAs films, with 2× 4 surface reconstructions, and the subsequent effect on the Schottky barrier height. Images of the interfaces indicate that the annealing process can greatly reduce the level of atomic mixing. A study of the I-V characteristics of Fe/GaAs Schottky barrier diodes, in a wide temperature range of 10300 K, reveals a strong temperature dependence for the unannealed case, arising from the presence of mixed surface states. The annealing process reduces the existence of the interfacial states, leading to more ideal behavior, with a reduced temperature dependence of the Schottky behavior.

Original languageEnglish
Article number5467484
Pages (from-to)1737-1740
Number of pages4
JournalIEEE Transactions on Magnetics
Volume46
Issue number6
DOIs
Publication statusPublished - 2010 Jun
Externally publishedYes

Keywords

  • Fe
  • GaAs and Schottky barrier
  • Spin-polarized injection
  • Spintronics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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