Schottky barrier height between erbium silicide and various morphology of Si(100) surface changed by alkaline etching

Hiroaki Tanaka; Akinobu Teramoto; Shigetoshi Sugawa; Tadahiro Ohmi

doi:10.1149/05807.0349ecst

Schottky barrier height between erbium silicide and various morphology of Si(100) surface changed by alkaline etching

Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Electrical and physical properties of ErSi_x on n-type Si(100) surfaces with an alkaline solution etching are investigated. The (111) facet of Si surface affects the SBH between ErSi_x and n-type Si, because the SBH depends on the surface orientation of Si. A controlling the facet of orientation is a key parameter for a reducing contact resistance for high performance MISFETs. These silicidation reactions are very important to develop the high current drivability devices.

Original language	English
Title of host publication	ECS Transactions
Publisher	Electrochemical Society Inc.
Pages	349-354
Number of pages	6
Edition	7
ISBN (Electronic)	9781607684527
DOIs	https://doi.org/10.1149/05807.0349ecst
Publication status	Published - 2013

Publication series

Name	ECS Transactions
Number	7
Volume	58
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

ASJC Scopus subject areas

Engineering(all)

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10.1149/05807.0349ecst

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Schottky barrier height between erbium silicide and various morphology of Si(100) surface changed by alkaline etching. / Tanaka, Hiroaki; Teramoto, Akinobu; Sugawa, Shigetoshi et al.

ECS Transactions. 7. ed. Electrochemical Society Inc., 2013. p. 349-354 (ECS Transactions; Vol. 58, No. 7).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - Electrical and physical properties of ErSix on n-type Si(100) surfaces with an alkaline solution etching are investigated. The (111) facet of Si surface affects the SBH between ErSix and n-type Si, because the SBH depends on the surface orientation of Si. A controlling the facet of orientation is a key parameter for a reducing contact resistance for high performance MISFETs. These silicidation reactions are very important to develop the high current drivability devices.

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Schottky barrier height between erbium silicide and various morphology of Si(100) surface changed by alkaline etching

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