Schottky barrier height between erbium silicide and various morphology of Si(100) surface changed by alkaline etching

Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Electrical and physical properties of ErSix on n-type Si(100) surfaces with an alkaline solution etching are investigated. The (111) facet of Si surface affects the SBH between ErSix and n-type Si, because the SBH depends on the surface orientation of Si. A controlling the facet of orientation is a key parameter for a reducing contact resistance for high performance MISFETs. These silicidation reactions are very important to develop the high current drivability devices.

Original languageEnglish
Pages (from-to)349-354
Number of pages6
JournalECS Transactions
Volume58
Issue number7
DOIs
Publication statusPublished - 2013 Jan 1

ASJC Scopus subject areas

  • Engineering(all)

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