Schottky barrier height behavior of Pt-Ru alloy contacts on single-crystal n-ZnO

T. Nagata, J. Volk, M. Haemori, Y. Yamashita, H. Yoshikawa, R. Hayakawa, M. Yoshitake, S. Ueda, K. Kobayashi, T. Chikyow

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5 Citations (Scopus)

Abstract

We investigated the Schottky barrier height (SBH) behavior of binary alloy Schottky contacts on n-type zinc oxide (n-ZnO) single crystals. Pt-Ru alloy electrodes were deposited on the Zn-polar and O-polar faces of ZnO substrates by combinatorial ion-beam deposition under identical conditions. The crystal structures of the Pt-Ru alloy film changed from the Pt phase (cubic structure) to the Ru phase (hexagonal structure) in the Pt-Ru alloy phase diagram with decreasing Pt content. The SBH, determined from current-voltage measurements, decreased with decreasing Pt content, indicating that the SBH behavior also followed the Pt-Ru alloy phase diagram. The alloy electrodes on the Zn-polar face showed better Schottky properties than those on the O-polar face. Hard x-ray photoelectron spectroscopy revealed a difference in the interface oxidization of the Pt-Ru alloy: the interface of the O-polar face and Pt-Ru mixed phase with poor crystallinity had a more oxidized layer than that of the Zn-polar face. As a result of this oxidization, the O-polar face, Pt-Ru mixed, and Ru phases showed poor Schottky properties.

Original languageEnglish
Article number103714
JournalJournal of Applied Physics
Volume107
Issue number10
DOIs
Publication statusPublished - 2010 May 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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