Scattering of 2D electrons by self-organized anti-dots in n-AlGaAs/GaAs heterojunction channels

T. Kawazu, T. Noda, H. Kim, J. Irisawa, T. Yamabana, G. Yusa, C. Metzener, H. Sakaki

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The scattering of carriers in a two-dimensional electron gas (2DEG) in a series of novel GaAs/n-AlGaAs heterojunctions is studied for the case where InAlAs anti-dots are embedded near the channel. Mobilities μ are measured as functions of the electron concentrations Ne and are compared with theoretical models which take into account the shape and distribution of anti-dots. In samples with low dot densities, mobilities are well explained in terms of the scattering by anti-dots with a random distribution. In contrast, in samples with dense and overlapping dots and a thick wetting layer, a roughness-like potential with Gaussian-type correlation is shown to account for the data. Influences of growth conditions and the alloy composition on the diameter and the density of InAlAs dots are also discussed.

Original languageEnglish
Pages (from-to)707-710
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume224
Issue number3
DOIs
Publication statusPublished - 2001 Apr
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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