TY - JOUR
T1 - Scattering of 2D electrons by self-organized anti-dots in n-AlGaAs/GaAs heterojunction channels
AU - Kawazu, T.
AU - Noda, T.
AU - Kim, H.
AU - Irisawa, J.
AU - Yamabana, T.
AU - Yusa, G.
AU - Metzener, C.
AU - Sakaki, H.
PY - 2001/4
Y1 - 2001/4
N2 - The scattering of carriers in a two-dimensional electron gas (2DEG) in a series of novel GaAs/n-AlGaAs heterojunctions is studied for the case where InAlAs anti-dots are embedded near the channel. Mobilities μ are measured as functions of the electron concentrations Ne and are compared with theoretical models which take into account the shape and distribution of anti-dots. In samples with low dot densities, mobilities are well explained in terms of the scattering by anti-dots with a random distribution. In contrast, in samples with dense and overlapping dots and a thick wetting layer, a roughness-like potential with Gaussian-type correlation is shown to account for the data. Influences of growth conditions and the alloy composition on the diameter and the density of InAlAs dots are also discussed.
AB - The scattering of carriers in a two-dimensional electron gas (2DEG) in a series of novel GaAs/n-AlGaAs heterojunctions is studied for the case where InAlAs anti-dots are embedded near the channel. Mobilities μ are measured as functions of the electron concentrations Ne and are compared with theoretical models which take into account the shape and distribution of anti-dots. In samples with low dot densities, mobilities are well explained in terms of the scattering by anti-dots with a random distribution. In contrast, in samples with dense and overlapping dots and a thick wetting layer, a roughness-like potential with Gaussian-type correlation is shown to account for the data. Influences of growth conditions and the alloy composition on the diameter and the density of InAlAs dots are also discussed.
UR - http://www.scopus.com/inward/record.url?scp=0035531274&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035531274&partnerID=8YFLogxK
U2 - 10.1002/(SICI)1521-3951(200104)224:3<707::AID-PSSB707>3.0.CO;2-H
DO - 10.1002/(SICI)1521-3951(200104)224:3<707::AID-PSSB707>3.0.CO;2-H
M3 - Article
AN - SCOPUS:0035531274
VL - 224
SP - 707
EP - 710
JO - Physica Status Solidi (B): Basic Research
JF - Physica Status Solidi (B): Basic Research
SN - 0370-1972
IS - 3
ER -