Scanning tunnelling spectroscopy of dangling-bond wires fabricated on the Si.100/-2×1-Hsurface

Taro Hitosugi; T. Hashizume; S. Heike; Y. Wada; S. Watanabe; T. Hasegawa; K. Kitazawa

doi:10.1007/s003390051224

Scanning tunnelling spectroscopy of dangling-bond wires fabricated on the Si.100/-2×1-Hsurface

Taro Hitosugi, T. Hashizume, S. Heike, Y. Wada, S. Watanabe, T. Hasegawa, K. Kitazawa

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The scanning tunnelling microscopy/spectroscopy (STM/STS) of atomic-scale dangling-bond (DB) wires on a hydrogen-terminated Si.100/-2×1-H surface is studied. A single DB and a paired DB on a Si dimer, fabricated by extracting hydrogen atoms from the hydrogen-terminated Si surface, are distinguished by STM and the DB wires are categorized into several types. In the case of DB wires made of paired DBs, the STS shows semiconductive electronic states with a band gap of approximately 0:5 eV. The DB wires made of both single and paired DBs show a finite density of states at Fermi energy and do not show semiconductive band gaps. The results are in good agreement with recent " firstprinciples" theoretical calculations.

Original language	English
Pages (from-to)	S695-S699
Journal	Applied Physics A: Materials Science and Processing
Volume	66
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1007/s003390051224
Publication status	Published - 1998
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)

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10.1007/s003390051224

Cite this

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title = "Scanning tunnelling spectroscopy of dangling-bond wires fabricated on the Si.100/-2×1-Hsurface",

abstract = "The scanning tunnelling microscopy/spectroscopy (STM/STS) of atomic-scale dangling-bond (DB) wires on a hydrogen-terminated Si.100/-2×1-H surface is studied. A single DB and a paired DB on a Si dimer, fabricated by extracting hydrogen atoms from the hydrogen-terminated Si surface, are distinguished by STM and the DB wires are categorized into several types. In the case of DB wires made of paired DBs, the STS shows semiconductive electronic states with a band gap of approximately 0:5 eV. The DB wires made of both single and paired DBs show a finite density of states at Fermi energy and do not show semiconductive band gaps. The results are in good agreement with recent {"} firstprinciples{"} theoretical calculations.",

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T1 - Scanning tunnelling spectroscopy of dangling-bond wires fabricated on the Si.100/-2×1-Hsurface

AU - Hitosugi, Taro

AU - Hashizume, T.

AU - Heike, S.

AU - Wada, Y.

AU - Watanabe, S.

AU - Hasegawa, T.

AU - Kitazawa, K.

PY - 1998

Y1 - 1998

N2 - The scanning tunnelling microscopy/spectroscopy (STM/STS) of atomic-scale dangling-bond (DB) wires on a hydrogen-terminated Si.100/-2×1-H surface is studied. A single DB and a paired DB on a Si dimer, fabricated by extracting hydrogen atoms from the hydrogen-terminated Si surface, are distinguished by STM and the DB wires are categorized into several types. In the case of DB wires made of paired DBs, the STS shows semiconductive electronic states with a band gap of approximately 0:5 eV. The DB wires made of both single and paired DBs show a finite density of states at Fermi energy and do not show semiconductive band gaps. The results are in good agreement with recent " firstprinciples" theoretical calculations.

AB - The scanning tunnelling microscopy/spectroscopy (STM/STS) of atomic-scale dangling-bond (DB) wires on a hydrogen-terminated Si.100/-2×1-H surface is studied. A single DB and a paired DB on a Si dimer, fabricated by extracting hydrogen atoms from the hydrogen-terminated Si surface, are distinguished by STM and the DB wires are categorized into several types. In the case of DB wires made of paired DBs, the STS shows semiconductive electronic states with a band gap of approximately 0:5 eV. The DB wires made of both single and paired DBs show a finite density of states at Fermi energy and do not show semiconductive band gaps. The results are in good agreement with recent " firstprinciples" theoretical calculations.

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Scanning tunnelling spectroscopy of dangling-bond wires fabricated on the Si.100/-2×1-Hsurface

Abstract

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