TY - JOUR
T1 - Scanning tunnelling spectroscopy of dangling-bond wires fabricated on the Si.100/-2×1-Hsurface
AU - Hitosugi, Taro
AU - Hashizume, T.
AU - Heike, S.
AU - Wada, Y.
AU - Watanabe, S.
AU - Hasegawa, T.
AU - Kitazawa, K.
PY - 1998
Y1 - 1998
N2 - The scanning tunnelling microscopy/spectroscopy (STM/STS) of atomic-scale dangling-bond (DB) wires on a hydrogen-terminated Si.100/-2×1-H surface is studied. A single DB and a paired DB on a Si dimer, fabricated by extracting hydrogen atoms from the hydrogen-terminated Si surface, are distinguished by STM and the DB wires are categorized into several types. In the case of DB wires made of paired DBs, the STS shows semiconductive electronic states with a band gap of approximately 0:5 eV. The DB wires made of both single and paired DBs show a finite density of states at Fermi energy and do not show semiconductive band gaps. The results are in good agreement with recent " firstprinciples" theoretical calculations.
AB - The scanning tunnelling microscopy/spectroscopy (STM/STS) of atomic-scale dangling-bond (DB) wires on a hydrogen-terminated Si.100/-2×1-H surface is studied. A single DB and a paired DB on a Si dimer, fabricated by extracting hydrogen atoms from the hydrogen-terminated Si surface, are distinguished by STM and the DB wires are categorized into several types. In the case of DB wires made of paired DBs, the STS shows semiconductive electronic states with a band gap of approximately 0:5 eV. The DB wires made of both single and paired DBs show a finite density of states at Fermi energy and do not show semiconductive band gaps. The results are in good agreement with recent " firstprinciples" theoretical calculations.
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U2 - 10.1007/s003390051224
DO - 10.1007/s003390051224
M3 - Article
AN - SCOPUS:0342294589
VL - 66
SP - S695-S699
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
SN - 0947-8396
IS - SUPPL. 1
ER -