Scanning tunnelling spectroscopy of dangling-bond wires fabricated on the Si.100/-2×1-Hsurface

Taro Hitosugi; T. Hashizume; S. Heike; Y. Wada; S. Watanabe; T. Hasegawa; K. Kitazawa

doi:10.1007/s003390051224

Scanning tunnelling spectroscopy of dangling-bond wires fabricated on the Si.100/-2×1-Hsurface

Taro Hitosugi, T. Hashizume, S. Heike, Y. Wada, S. Watanabe, T. Hasegawa, K. Kitazawa

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The scanning tunnelling microscopy/spectroscopy (STM/STS) of atomic-scale dangling-bond (DB) wires on a hydrogen-terminated Si.100/-2×1-H surface is studied. A single DB and a paired DB on a Si dimer, fabricated by extracting hydrogen atoms from the hydrogen-terminated Si surface, are distinguished by STM and the DB wires are categorized into several types. In the case of DB wires made of paired DBs, the STS shows semiconductive electronic states with a band gap of approximately 0:5 eV. The DB wires made of both single and paired DBs show a finite density of states at Fermi energy and do not show semiconductive band gaps. The results are in good agreement with recent " firstprinciples" theoretical calculations.

Original language	English
Pages (from-to)	S695-S699
Journal	Applied Physics A: Materials Science and Processing
Volume	66
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1007/s003390051224
Publication status	Published - 1998

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)

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@article{74b4ecde51574e4687994106e0216bd4,

title = "Scanning tunnelling spectroscopy of dangling-bond wires fabricated on the Si.100/-2×1-Hsurface",

abstract = "The scanning tunnelling microscopy/spectroscopy (STM/STS) of atomic-scale dangling-bond (DB) wires on a hydrogen-terminated Si.100/-2×1-H surface is studied. A single DB and a paired DB on a Si dimer, fabricated by extracting hydrogen atoms from the hydrogen-terminated Si surface, are distinguished by STM and the DB wires are categorized into several types. In the case of DB wires made of paired DBs, the STS shows semiconductive electronic states with a band gap of approximately 0:5 eV. The DB wires made of both single and paired DBs show a finite density of states at Fermi energy and do not show semiconductive band gaps. The results are in good agreement with recent {"} firstprinciples{"} theoretical calculations.",

author = "Taro Hitosugi and T. Hashizume and S. Heike and Y. Wada and S. Watanabe and T. Hasegawa and K. Kitazawa",

year = "1998",

doi = "10.1007/s003390051224",

language = "English",

volume = "66",

pages = "S695--S699",

journal = "Applied Physics A: Materials Science and Processing",

issn = "0947-8396",

publisher = "Springer Verlag",

number = "SUPPL. 1",

}

TY - JOUR

T1 - Scanning tunnelling spectroscopy of dangling-bond wires fabricated on the Si.100/-2×1-Hsurface

AU - Hitosugi, Taro

AU - Hashizume, T.

AU - Heike, S.

AU - Wada, Y.

AU - Watanabe, S.

AU - Hasegawa, T.

AU - Kitazawa, K.

PY - 1998

Y1 - 1998

N2 - The scanning tunnelling microscopy/spectroscopy (STM/STS) of atomic-scale dangling-bond (DB) wires on a hydrogen-terminated Si.100/-2×1-H surface is studied. A single DB and a paired DB on a Si dimer, fabricated by extracting hydrogen atoms from the hydrogen-terminated Si surface, are distinguished by STM and the DB wires are categorized into several types. In the case of DB wires made of paired DBs, the STS shows semiconductive electronic states with a band gap of approximately 0:5 eV. The DB wires made of both single and paired DBs show a finite density of states at Fermi energy and do not show semiconductive band gaps. The results are in good agreement with recent " firstprinciples" theoretical calculations.

AB - The scanning tunnelling microscopy/spectroscopy (STM/STS) of atomic-scale dangling-bond (DB) wires on a hydrogen-terminated Si.100/-2×1-H surface is studied. A single DB and a paired DB on a Si dimer, fabricated by extracting hydrogen atoms from the hydrogen-terminated Si surface, are distinguished by STM and the DB wires are categorized into several types. In the case of DB wires made of paired DBs, the STS shows semiconductive electronic states with a band gap of approximately 0:5 eV. The DB wires made of both single and paired DBs show a finite density of states at Fermi energy and do not show semiconductive band gaps. The results are in good agreement with recent " firstprinciples" theoretical calculations.

UR - http://www.scopus.com/inward/record.url?scp=0342294589&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0342294589&partnerID=8YFLogxK

U2 - 10.1007/s003390051224

DO - 10.1007/s003390051224

M3 - Article

AN - SCOPUS:0342294589

VL - 66

SP - S695-S699

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

SN - 0947-8396

IS - SUPPL. 1

ER -