Scanning tunnelling microscopy of fullerenes on metal and semiconductor surfaces

R. Z. Bakhtizin, T. Hashizume, X. D. Wang, T. Sakurai

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


The current state of the ultra-high vacuum scanning tunneling microscopy (STM) of fullerene molecules is reviewed with the use of the authors' work. Emphasis is placed on the interaction of the C60 and C70 fullerenes, separately or in mixture, with semiconductor [Si(111)-7×7 and Si(100)-2×1] and metal [Cu(111)-1×1 and Ag(111)-1×1] surfaces. Using STM enables the fullerene adsorption geometry and the corresponding surface reconstruction to be directly observed and, at high resolutions, reveals intramolecular structures which are analyzed theoretically within the local charge distribution model. Results on the ordered growth of fullerene films on metal and semiconductor surfaces are presented and discussed.

Original languageEnglish
Pages (from-to)306-307
Number of pages2
JournalUspekhi Fizicheskikh Nauk
Issue number3
Publication statusPublished - 1997
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


Dive into the research topics of 'Scanning tunnelling microscopy of fullerenes on metal and semiconductor surfaces'. Together they form a unique fingerprint.

Cite this