Scanning tunneling spectroscopy of dangling-bond wires fabricated on the Si(100)-2×1-H surface

Taro Hitosugi; Tomihiro Hashizume; Seiji Heike; Satoshi Watanabe; Yasuo Wada; Tetsuya Hasegawa; Koichi Kitazawa

Scanning tunneling spectroscopy of dangling-bond wires fabricated on the Si(100)-2×1-H surface

Taro Hitosugi, Tomihiro Hashizume, Seiji Heike, Satoshi Watanabe, Yasuo Wada, Tetsuya Hasegawa, Koichi Kitazawa

Research output: Contribution to journal › Article › peer-review

Abstract

Tunneling spectroscopy of atomic-scale dangling-bond wires on a hydrogen-terminated Si(100)-2×1-H surface is studied using ultrahigh-vacuum scanning tunneling microscopy. Individual dangling bonds are fabricated by extracting hydrogen atoms one by one from the hydrogen terminated surface to form atomic-scale dangling-bond wires. These wires show a finite density of states at the Fermi level and do not show semiconductive band gaps. The results are compared with first-principles theoretical calculations.

Original language	English
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	36
Issue number	3 B
Publication status	Published - 1997 Jan 1

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

Cite this

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title = "Scanning tunneling spectroscopy of dangling-bond wires fabricated on the Si(100)-2×1-H surface",

abstract = "Tunneling spectroscopy of atomic-scale dangling-bond wires on a hydrogen-terminated Si(100)-2×1-H surface is studied using ultrahigh-vacuum scanning tunneling microscopy. Individual dangling bonds are fabricated by extracting hydrogen atoms one by one from the hydrogen terminated surface to form atomic-scale dangling-bond wires. These wires show a finite density of states at the Fermi level and do not show semiconductive band gaps. The results are compared with first-principles theoretical calculations.",

author = "Taro Hitosugi and Tomihiro Hashizume and Seiji Heike and Satoshi Watanabe and Yasuo Wada and Tetsuya Hasegawa and Koichi Kitazawa",

year = "1997",

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journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

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T1 - Scanning tunneling spectroscopy of dangling-bond wires fabricated on the Si(100)-2×1-H surface

AU - Hitosugi, Taro

AU - Hashizume, Tomihiro

AU - Heike, Seiji

AU - Watanabe, Satoshi

AU - Wada, Yasuo

AU - Hasegawa, Tetsuya

AU - Kitazawa, Koichi

PY - 1997/1/1

Y1 - 1997/1/1

N2 - Tunneling spectroscopy of atomic-scale dangling-bond wires on a hydrogen-terminated Si(100)-2×1-H surface is studied using ultrahigh-vacuum scanning tunneling microscopy. Individual dangling bonds are fabricated by extracting hydrogen atoms one by one from the hydrogen terminated surface to form atomic-scale dangling-bond wires. These wires show a finite density of states at the Fermi level and do not show semiconductive band gaps. The results are compared with first-principles theoretical calculations.

AB - Tunneling spectroscopy of atomic-scale dangling-bond wires on a hydrogen-terminated Si(100)-2×1-H surface is studied using ultrahigh-vacuum scanning tunneling microscopy. Individual dangling bonds are fabricated by extracting hydrogen atoms one by one from the hydrogen terminated surface to form atomic-scale dangling-bond wires. These wires show a finite density of states at the Fermi level and do not show semiconductive band gaps. The results are compared with first-principles theoretical calculations.

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M3 - Article

AN - SCOPUS:0031101621

VL - 36

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 3 B

ER -

Scanning tunneling spectroscopy of dangling-bond wires fabricated on the Si(100)-2×1-H surface

Abstract

ASJC Scopus subject areas

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