Abstract
Tunneling spectroscopy of atomic-scale dangling-bond wires on a hydrogen-terminated Si(100)-2×1-H surface is studied using ultrahigh-vacuum scanning tunneling microscopy. Individual dangling bonds are fabricated by extracting hydrogen atoms one by one from the hydrogen terminated surface to form atomic-scale dangling-bond wires. These wires show a finite density of states at the Fermi level and do not show semiconductive band gaps. The results are compared with first-principles theoretical calculations.
| Original language | English |
|---|---|
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 36 |
| Issue number | 3 B |
| Publication status | Published - 1997 Jan 1 |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
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Hitosugi, T., Hashizume, T., Heike, S., Watanabe, S., Wada, Y., Hasegawa, T., & Kitazawa, K. (1997). Scanning tunneling spectroscopy of dangling-bond wires fabricated on the Si(100)-2×1-H surface. Japanese Journal of Applied Physics, Part 2: Letters, 36(3 B).