Tunneling spectroscopy of atomic-scale dangling-bond wires on a hydrogen-terminated Si(100)-2×1-H surface is studied using ultrahigh-vacuum scanning tunneling microscopy. Individual dangling bonds are fabricated by extracting hydrogen atoms one by one from the hydrogen terminated surface to form atomic-scale dangling-bond wires. These wires show a finite density of states at the Fermi level and do not show semiconductive band gaps. The results are compared with first-principles theoretical calculations.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||3 B|
|Publication status||Published - 1997 Jan 1|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)