Scanning tunneling spectroscopy of dangling-bond wires fabricated on the Si(100)-2×1-H surface

Taro Hitosugi, Tomihiro Hashizume, Seiji Heike, Satoshi Watanabe, Yasuo Wada, Tetsuya Hasegawa, Koichi Kitazawa

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    42 Citations (Scopus)

    Abstract

    Tunneling spectroscopy of atomic-scale dangling-bond wires on a hydrogen-terminated Si(100)-2×1-H surface is studied using ultrahigh-vacuum scanning tunneling microscopy. Individual dangling bonds are fabricated by extracting hydrogen atoms one by one from the hydrogen terminated surface to form atomic-scale dangling-bond wires. These wires show a finite density of states at the Fermi level and do not show semiconductive band gaps. The results are compared with first-principles theoretical calculations.

    Original languageEnglish
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Volume36
    Issue number3 B
    Publication statusPublished - 1997 Jan 1

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy (miscellaneous)
    • Physics and Astronomy(all)

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  • Cite this

    Hitosugi, T., Hashizume, T., Heike, S., Watanabe, S., Wada, Y., Hasegawa, T., & Kitazawa, K. (1997). Scanning tunneling spectroscopy of dangling-bond wires fabricated on the Si(100)-2×1-H surface. Japanese Journal of Applied Physics, Part 2: Letters, 36(3 B).