Scanning tunneling microscopy/spectroscopy of dangling-bond wires fabricated on the Si(100)-2×1-H surface

Taro Hitosugi; T. Hashizume; S. Heike; H. Kajiyama; Y. Wada; S. Watanabe; T. Hasegawa; K. Kitazawa

doi:10.1016/S0169-4332(98)00081-6

Scanning tunneling microscopy/spectroscopy of dangling-bond wires fabricated on the Si(100)-2×1-H surface

Taro Hitosugi, T. Hashizume, S. Heike, H. Kajiyama, Y. Wada, S. Watanabe, T. Hasegawa, K. Kitazawa

Research output: Contribution to journal › Conference article › peer-review

23 Citations (Scopus)

Abstract

We present a scanning tunneling microscopy/spectroscopy (STM/STS) study of atomic-scale dangling-bond (DB) wires on a hydrogen-terminated Si(100)-2×1-H surface. In the case of DB wires made of paired DBs, the STS shows semiconductive electronic states with a band gap of approximately 0.5 eV. The DB wires made of both single and paired DBs show a finite density of states at Fermi energy and do not show semiconductive band gaps. We have succeeded in making an atomic-scale wire that has a finite density of states at Fermi energy on a semiconductive surface. The results are in good agreement with a recent first-principles theoretical calculations.

Original language	English
Pages (from-to)	340-345
Number of pages	6
Journal	Applied Surface Science
Volume	130-132
DOIs	https://doi.org/10.1016/S0169-4332(98)00081-6
Publication status	Published - 1998
Externally published	Yes
Event	Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 - Tokyo, Jpn Duration: 1997 Oct 27 → 1997 Oct 30

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/S0169-4332(98)00081-6

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@article{7190fc59159349009ffcd79004813a15,

title = "Scanning tunneling microscopy/spectroscopy of dangling-bond wires fabricated on the Si(100)-2×1-H surface",

abstract = "We present a scanning tunneling microscopy/spectroscopy (STM/STS) study of atomic-scale dangling-bond (DB) wires on a hydrogen-terminated Si(100)-2×1-H surface. In the case of DB wires made of paired DBs, the STS shows semiconductive electronic states with a band gap of approximately 0.5 eV. The DB wires made of both single and paired DBs show a finite density of states at Fermi energy and do not show semiconductive band gaps. We have succeeded in making an atomic-scale wire that has a finite density of states at Fermi energy on a semiconductive surface. The results are in good agreement with a recent first-principles theoretical calculations.",

author = "Taro Hitosugi and T. Hashizume and S. Heike and H. Kajiyama and Y. Wada and S. Watanabe and T. Hasegawa and K. Kitazawa",

note = "Funding Information: We would like to express our thanks to the Japan Science and Technology Corporation (JST) for the support by CREST (Core Research for Evolutional Science and Technology).; Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 ; Conference date: 27-10-1997 Through 30-10-1997",

year = "1998",

doi = "10.1016/S0169-4332(98)00081-6",

language = "English",

volume = "130-132",

pages = "340--345",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

}

TY - JOUR

T1 - Scanning tunneling microscopy/spectroscopy of dangling-bond wires fabricated on the Si(100)-2×1-H surface

AU - Hitosugi, Taro

AU - Hashizume, T.

AU - Heike, S.

AU - Kajiyama, H.

AU - Wada, Y.

AU - Watanabe, S.

AU - Hasegawa, T.

AU - Kitazawa, K.

N1 - Funding Information: We would like to express our thanks to the Japan Science and Technology Corporation (JST) for the support by CREST (Core Research for Evolutional Science and Technology).

PY - 1998

Y1 - 1998

N2 - We present a scanning tunneling microscopy/spectroscopy (STM/STS) study of atomic-scale dangling-bond (DB) wires on a hydrogen-terminated Si(100)-2×1-H surface. In the case of DB wires made of paired DBs, the STS shows semiconductive electronic states with a band gap of approximately 0.5 eV. The DB wires made of both single and paired DBs show a finite density of states at Fermi energy and do not show semiconductive band gaps. We have succeeded in making an atomic-scale wire that has a finite density of states at Fermi energy on a semiconductive surface. The results are in good agreement with a recent first-principles theoretical calculations.

AB - We present a scanning tunneling microscopy/spectroscopy (STM/STS) study of atomic-scale dangling-bond (DB) wires on a hydrogen-terminated Si(100)-2×1-H surface. In the case of DB wires made of paired DBs, the STS shows semiconductive electronic states with a band gap of approximately 0.5 eV. The DB wires made of both single and paired DBs show a finite density of states at Fermi energy and do not show semiconductive band gaps. We have succeeded in making an atomic-scale wire that has a finite density of states at Fermi energy on a semiconductive surface. The results are in good agreement with a recent first-principles theoretical calculations.

UR - http://www.scopus.com/inward/record.url?scp=0032094674&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032094674&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(98)00081-6

DO - 10.1016/S0169-4332(98)00081-6

M3 - Conference article

AN - SCOPUS:0032094674

VL - 130-132

SP - 340

EP - 345

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

T2 - Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4

Y2 - 27 October 1997 through 30 October 1997

ER -

Scanning tunneling microscopy/spectroscopy of dangling-bond wires fabricated on the Si(100)-2×1-H surface

Abstract

ASJC Scopus subject areas

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