TY - JOUR
T1 - Scanning tunneling microscopy/spectroscopy of dangling-bond wires fabricated on the Si(100)-2×1-H surface
AU - Hitosugi, Taro
AU - Hashizume, T.
AU - Heike, S.
AU - Kajiyama, H.
AU - Wada, Y.
AU - Watanabe, S.
AU - Hasegawa, T.
AU - Kitazawa, K.
N1 - Funding Information:
We would like to express our thanks to the Japan Science and Technology Corporation (JST) for the support by CREST (Core Research for Evolutional Science and Technology).
PY - 1998
Y1 - 1998
N2 - We present a scanning tunneling microscopy/spectroscopy (STM/STS) study of atomic-scale dangling-bond (DB) wires on a hydrogen-terminated Si(100)-2×1-H surface. In the case of DB wires made of paired DBs, the STS shows semiconductive electronic states with a band gap of approximately 0.5 eV. The DB wires made of both single and paired DBs show a finite density of states at Fermi energy and do not show semiconductive band gaps. We have succeeded in making an atomic-scale wire that has a finite density of states at Fermi energy on a semiconductive surface. The results are in good agreement with a recent first-principles theoretical calculations.
AB - We present a scanning tunneling microscopy/spectroscopy (STM/STS) study of atomic-scale dangling-bond (DB) wires on a hydrogen-terminated Si(100)-2×1-H surface. In the case of DB wires made of paired DBs, the STS shows semiconductive electronic states with a band gap of approximately 0.5 eV. The DB wires made of both single and paired DBs show a finite density of states at Fermi energy and do not show semiconductive band gaps. We have succeeded in making an atomic-scale wire that has a finite density of states at Fermi energy on a semiconductive surface. The results are in good agreement with a recent first-principles theoretical calculations.
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U2 - 10.1016/S0169-4332(98)00081-6
DO - 10.1016/S0169-4332(98)00081-6
M3 - Conference article
AN - SCOPUS:0032094674
VL - 130-132
SP - 340
EP - 345
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
T2 - Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4
Y2 - 27 October 1997 through 30 October 1997
ER -