Scanning tunneling microscopy/spectroscopy of dangling-bond wires fabricated on the Si(100)-2×1-H surface

Taro Hitosugi, T. Hashizume, S. Heike, H. Kajiyama, Y. Wada, S. Watanabe, T. Hasegawa, K. Kitazawa

    Research output: Contribution to journalConference articlepeer-review

    23 Citations (Scopus)

    Abstract

    We present a scanning tunneling microscopy/spectroscopy (STM/STS) study of atomic-scale dangling-bond (DB) wires on a hydrogen-terminated Si(100)-2×1-H surface. In the case of DB wires made of paired DBs, the STS shows semiconductive electronic states with a band gap of approximately 0.5 eV. The DB wires made of both single and paired DBs show a finite density of states at Fermi energy and do not show semiconductive band gaps. We have succeeded in making an atomic-scale wire that has a finite density of states at Fermi energy on a semiconductive surface. The results are in good agreement with a recent first-principles theoretical calculations.

    Original languageEnglish
    Pages (from-to)340-345
    Number of pages6
    JournalApplied Surface Science
    Volume130-132
    DOIs
    Publication statusPublished - 1998 Jan 1
    EventProceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 - Tokyo, Jpn
    Duration: 1997 Oct 271997 Oct 30

    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Physics and Astronomy(all)
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

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