Scanning tunneling microscopy/spectroscopy of dangling-bond wires fabricated on the Si(100)-2×1-H surface

Taro Hitosugi; T. Hashizume; S. Heike; H. Kajiyama; Y. Wada; S. Watanabe; T. Hasegawa; K. Kitazawa

doi:10.1016/S0169-4332(98)00081-6

Scanning tunneling microscopy/spectroscopy of dangling-bond wires fabricated on the Si(100)-2×1-H surface

Taro Hitosugi, T. Hashizume, S. Heike, H. Kajiyama, Y. Wada, S. Watanabe, T. Hasegawa, K. Kitazawa

Research output: Contribution to journal › Conference article › peer-review

23 Citations (Scopus)

Abstract

We present a scanning tunneling microscopy/spectroscopy (STM/STS) study of atomic-scale dangling-bond (DB) wires on a hydrogen-terminated Si(100)-2×1-H surface. In the case of DB wires made of paired DBs, the STS shows semiconductive electronic states with a band gap of approximately 0.5 eV. The DB wires made of both single and paired DBs show a finite density of states at Fermi energy and do not show semiconductive band gaps. We have succeeded in making an atomic-scale wire that has a finite density of states at Fermi energy on a semiconductive surface. The results are in good agreement with a recent first-principles theoretical calculations.

Original language	English
Pages (from-to)	340-345
Number of pages	6
Journal	Applied Surface Science
Volume	130-132
DOIs	https://doi.org/10.1016/S0169-4332(98)00081-6
Publication status	Published - 1998 Jan 1
Event	Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 - Tokyo, Jpn Duration: 1997 Oct 27 → 1997 Oct 30

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = "Scanning tunneling microscopy/spectroscopy of dangling-bond wires fabricated on the Si(100)-2×1-H surface",

abstract = "We present a scanning tunneling microscopy/spectroscopy (STM/STS) study of atomic-scale dangling-bond (DB) wires on a hydrogen-terminated Si(100)-2×1-H surface. In the case of DB wires made of paired DBs, the STS shows semiconductive electronic states with a band gap of approximately 0.5 eV. The DB wires made of both single and paired DBs show a finite density of states at Fermi energy and do not show semiconductive band gaps. We have succeeded in making an atomic-scale wire that has a finite density of states at Fermi energy on a semiconductive surface. The results are in good agreement with a recent first-principles theoretical calculations.",

author = "Taro Hitosugi and T. Hashizume and S. Heike and H. Kajiyama and Y. Wada and S. Watanabe and T. Hasegawa and K. Kitazawa",

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note = "Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 ; Conference date: 27-10-1997 Through 30-10-1997",

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T1 - Scanning tunneling microscopy/spectroscopy of dangling-bond wires fabricated on the Si(100)-2×1-H surface

AU - Hitosugi, Taro

AU - Hashizume, T.

AU - Heike, S.

AU - Kajiyama, H.

AU - Wada, Y.

AU - Watanabe, S.

AU - Hasegawa, T.

AU - Kitazawa, K.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - We present a scanning tunneling microscopy/spectroscopy (STM/STS) study of atomic-scale dangling-bond (DB) wires on a hydrogen-terminated Si(100)-2×1-H surface. In the case of DB wires made of paired DBs, the STS shows semiconductive electronic states with a band gap of approximately 0.5 eV. The DB wires made of both single and paired DBs show a finite density of states at Fermi energy and do not show semiconductive band gaps. We have succeeded in making an atomic-scale wire that has a finite density of states at Fermi energy on a semiconductive surface. The results are in good agreement with a recent first-principles theoretical calculations.

AB - We present a scanning tunneling microscopy/spectroscopy (STM/STS) study of atomic-scale dangling-bond (DB) wires on a hydrogen-terminated Si(100)-2×1-H surface. In the case of DB wires made of paired DBs, the STS shows semiconductive electronic states with a band gap of approximately 0.5 eV. The DB wires made of both single and paired DBs show a finite density of states at Fermi energy and do not show semiconductive band gaps. We have succeeded in making an atomic-scale wire that has a finite density of states at Fermi energy on a semiconductive surface. The results are in good agreement with a recent first-principles theoretical calculations.

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JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

T2 - Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4

Y2 - 27 October 1997 through 30 October 1997

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