TY - JOUR
T1 - Scanning tunneling microscopy study of GaAs(001) surfaces
AU - Xue, Qi Kun
AU - Hashizume, T.
AU - Sakurai, T.
N1 - Funding Information:
We would like to thank Prof. J.M. Zhou, Prof. A. Ichimiya, Dr. T. Ohno and Prof. Y. Hasegawa for fruitful collaborations. We would also like to acknowledge Dr. Tim S. Jones, Imperial College for generously providing us with the STM image of the c(4x4) surface. The work was partially supported by Special Promoted Research Project on BEEM (No. 08102001) and Priority Area Project (Single-Electron-Devices Project), Department of Education.
PY - 1999/3
Y1 - 1999/3
N2 - While GaAs(001) is the most commonly used substrate in fabrication of wireless and opto-electronic devices based on III-V compound semiconductors by molecular beam epitaxy (MBE), metallorganic chemical vapor deposition (MOCVD) and related techniques, its surface structure have been disputed since the beginning of development of the techniques. Invention of scanning tunneling microscopy (STM) has revolutionized the approach of surface/interface investigation, contributing greatly in the atomistic understanding of the GaAs surface phases. This paper reviews the STM studies of principal reconstructions, from As-rich c(4×4), 2×4, 2×6 to Ga-rich 4×2 and 4×6, found on the GaAs (001) surface. These studies, together with advanced theoretical efforts, have helped us to establish a unified structural model for various reconstructions, with which we can now explain most of the observations and long-standing controversies in atomic structures and surface stoichiometries.
AB - While GaAs(001) is the most commonly used substrate in fabrication of wireless and opto-electronic devices based on III-V compound semiconductors by molecular beam epitaxy (MBE), metallorganic chemical vapor deposition (MOCVD) and related techniques, its surface structure have been disputed since the beginning of development of the techniques. Invention of scanning tunneling microscopy (STM) has revolutionized the approach of surface/interface investigation, contributing greatly in the atomistic understanding of the GaAs surface phases. This paper reviews the STM studies of principal reconstructions, from As-rich c(4×4), 2×4, 2×6 to Ga-rich 4×2 and 4×6, found on the GaAs (001) surface. These studies, together with advanced theoretical efforts, have helped us to establish a unified structural model for various reconstructions, with which we can now explain most of the observations and long-standing controversies in atomic structures and surface stoichiometries.
KW - 61.14.Hg
KW - 61.16.Ch
KW - 68.55.Bd
KW - EB
KW - EL
KW - First-principles total energy calculations
KW - GD
KW - GaAs
KW - Molecular beam epitaxy
KW - Reflection high energy electron diffraction
KW - SBA
KW - Scanning tunneling microscopy
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U2 - 10.1016/s0169-4332(98)00511-x
DO - 10.1016/s0169-4332(98)00511-x
M3 - Article
AN - SCOPUS:0039521659
VL - 141
SP - 244
EP - 263
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 3-4
ER -