Scanning tunneling microscopy study of GaAs(001) surfaces

Qi Kun Xue, T. Hashizume, T. Sakurai

    Research output: Contribution to journalArticlepeer-review

    56 Citations (Scopus)

    Abstract

    While GaAs(001) is the most commonly used substrate in fabrication of wireless and opto-electronic devices based on III-V compound semiconductors by molecular beam epitaxy (MBE), metallorganic chemical vapor deposition (MOCVD) and related techniques, its surface structure have been disputed since the beginning of development of the techniques. Invention of scanning tunneling microscopy (STM) has revolutionized the approach of surface/interface investigation, contributing greatly in the atomistic understanding of the GaAs surface phases. This paper reviews the STM studies of principal reconstructions, from As-rich c(4×4), 2×4, 2×6 to Ga-rich 4×2 and 4×6, found on the GaAs (001) surface. These studies, together with advanced theoretical efforts, have helped us to establish a unified structural model for various reconstructions, with which we can now explain most of the observations and long-standing controversies in atomic structures and surface stoichiometries.

    Original languageEnglish
    Pages (from-to)244-263
    Number of pages20
    JournalApplied Surface Science
    Volume141
    Issue number3-4
    DOIs
    Publication statusPublished - 1999 Mar

    Keywords

    • 61.14.Hg
    • 61.16.Ch
    • 68.55.Bd
    • EB
    • EL
    • First-principles total energy calculations
    • GD
    • GaAs
    • Molecular beam epitaxy
    • Reflection high energy electron diffraction
    • SBA
    • Scanning tunneling microscopy

    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Physics and Astronomy(all)
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

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