Abstract
Faceting on Si(113) surfaces misoriented towards a low-symmetry direction which is rotated by 57° from [332] to [110] has been studied using scanning tunneling microscopy. The faceting temperature of this surface is shown to be around 720°C, which is appreciably lower than those of the surfaces miscut towards the high-symmetry [332] direction. During faceting, the average terrace width varies as a power law versus annealing time with an exponent of∼1/6 for temperatures of 600 and 650°C in agreement with previous results for surfaces miscut towards the [332] direction.
Original language | English |
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Pages (from-to) | 5870-5874 |
Number of pages | 5 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 37 |
Issue number | 11 |
DOIs | |
Publication status | Published - 1998 Nov |
Externally published | Yes |
Keywords
- Faceting
- Scanning tunneling microscopy
- Step
- Vicinal Si(113)
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)