Scanning tunneling microscopy study of faceting on vicinal Si(113)

Koichi Sudoh; Tatsuo Yoshinobu; Hiroshi Iwasaki

doi:10.1143/jjap.37.5870

Scanning tunneling microscopy study of faceting on vicinal Si(113)

Koichi Sudoh, Tatsuo Yoshinobu, Hiroshi Iwasaki

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Faceting on Si(113) surfaces misoriented towards a low-symmetry direction which is rotated by 57° from [332] to [110] has been studied using scanning tunneling microscopy. The faceting temperature of this surface is shown to be around 720°C, which is appreciably lower than those of the surfaces miscut towards the high-symmetry [332] direction. During faceting, the average terrace width varies as a power law versus annealing time with an exponent of∼1/6 for temperatures of 600 and 650°C in agreement with previous results for surfaces miscut towards the [332] direction.

Original language	English
Pages (from-to)	5870-5874
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	37
Issue number	11
DOIs	https://doi.org/10.1143/jjap.37.5870
Publication status	Published - 1998 Nov
Externally published	Yes

Keywords

Faceting
Scanning tunneling microscopy
Step
Vicinal Si(113)

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.37.5870

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@article{9d4f7cb72d014b82bcb728bb8a6dcbd3,

title = "Scanning tunneling microscopy study of faceting on vicinal Si(113)",

abstract = "Faceting on Si(113) surfaces misoriented towards a low-symmetry direction which is rotated by 57° from [332] to [110] has been studied using scanning tunneling microscopy. The faceting temperature of this surface is shown to be around 720°C, which is appreciably lower than those of the surfaces miscut towards the high-symmetry [332] direction. During faceting, the average terrace width varies as a power law versus annealing time with an exponent of∼1/6 for temperatures of 600 and 650°C in agreement with previous results for surfaces miscut towards the [332] direction.",

keywords = "Faceting, Scanning tunneling microscopy, Step, Vicinal Si(113)",

author = "Koichi Sudoh and Tatsuo Yoshinobu and Hiroshi Iwasaki",

year = "1998",

month = nov,

doi = "10.1143/jjap.37.5870",

language = "English",

volume = "37",

pages = "5870--5874",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "11",

}

TY - JOUR

T1 - Scanning tunneling microscopy study of faceting on vicinal Si(113)

AU - Sudoh, Koichi

AU - Yoshinobu, Tatsuo

AU - Iwasaki, Hiroshi

PY - 1998/11

Y1 - 1998/11

N2 - Faceting on Si(113) surfaces misoriented towards a low-symmetry direction which is rotated by 57° from [332] to [110] has been studied using scanning tunneling microscopy. The faceting temperature of this surface is shown to be around 720°C, which is appreciably lower than those of the surfaces miscut towards the high-symmetry [332] direction. During faceting, the average terrace width varies as a power law versus annealing time with an exponent of∼1/6 for temperatures of 600 and 650°C in agreement with previous results for surfaces miscut towards the [332] direction.

AB - Faceting on Si(113) surfaces misoriented towards a low-symmetry direction which is rotated by 57° from [332] to [110] has been studied using scanning tunneling microscopy. The faceting temperature of this surface is shown to be around 720°C, which is appreciably lower than those of the surfaces miscut towards the high-symmetry [332] direction. During faceting, the average terrace width varies as a power law versus annealing time with an exponent of∼1/6 for temperatures of 600 and 650°C in agreement with previous results for surfaces miscut towards the [332] direction.

KW - Faceting

KW - Scanning tunneling microscopy

KW - Step

KW - Vicinal Si(113)

UR - http://www.scopus.com/inward/record.url?scp=0032203112&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032203112&partnerID=8YFLogxK

U2 - 10.1143/jjap.37.5870

DO - 10.1143/jjap.37.5870

M3 - Article

AN - SCOPUS:0032203112

VL - 37

SP - 5870

EP - 5874

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 11

ER -

Scanning tunneling microscopy study of faceting on vicinal Si(113)

Abstract

Keywords

ASJC Scopus subject areas

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