Scanning tunneling microscopy study of faceting on vicinal Si(113)

Koichi Sudoh, Tatsuo Yoshinobu, Hiroshi Iwasaki

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Faceting on Si(113) surfaces misoriented towards a low-symmetry direction which is rotated by 57° from [332] to [110] has been studied using scanning tunneling microscopy. The faceting temperature of this surface is shown to be around 720°C, which is appreciably lower than those of the surfaces miscut towards the high-symmetry [332] direction. During faceting, the average terrace width varies as a power law versus annealing time with an exponent of∼1/6 for temperatures of 600 and 650°C in agreement with previous results for surfaces miscut towards the [332] direction.

Original languageEnglish
Pages (from-to)5870-5874
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume37
Issue number11
DOIs
Publication statusPublished - 1998 Nov

Keywords

  • Faceting
  • Scanning tunneling microscopy
  • Step
  • Vicinal Si(113)

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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