Scanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth

R. Z. Bakhtizin, Q. Zh Xue, Q. K. Xue, K. H. Wu, T. Sakurai

Research output: Contribution to journalReview articlepeer-review

6 Citations (Scopus)

Abstract

The current status of studies and new trends in obtaining and exploring surface characteristics of III-nitride semiconductors are analyzed and reviewed. Using a unique setup combining a scanning tunneling microscope (STM) with an inline molecular-beam epitaxy (MBE) chamber, the surface atomic structures on both hexagonal and cubic GaN films grown by nitrogen-plasma-assisted MBE have been studied in situ over a broad range of temperatures and [N]/[Ga] ratios. Models of the observed surface phases are developed based on the comparative analysis of their atomic-resolution STM images and ab initio total energy calculations.

Original languageEnglish
Pages (from-to)371-391
Number of pages21
JournalPhysics-Uspekhi
Volume47
Issue number4
DOIs
Publication statusPublished - 2004 Apr
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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