Scanning tunneling microscopy of the GaAs(001) surface reconstructions

Qi Kun Xue, Tomihiro Hashizume, Ayahiko Ichimiya, Takahisa Ohno, Yukio Hasegawa, Toshio Sakurai

    Research output: Contribution to journalArticle

    14 Citations (Scopus)

    Abstract

    The atomic structure of the GaAs(001) surface has been disputed since molecular beam epitaxy (MBE) technique was developed in the earlier nineteen sixties. The invention of scanning tunneling microscopy (STM) with its real-space atom-resolution capability, has revolutionized the situation. This paper reviews the STM investigations of the principal reconstructions found on the GaAs(001) surface, As-rich 2x4 and 2x6, Ga-rich 4x2 and 4x6. These studies, together with advanced theoretical analyses, have finally resulted in establishment of a unified structural model for various reconstructions, with which we can explain most of the observations and long-standing controversies about the atomic structures and surface stoichiometries.

    Original languageEnglish
    Pages (from-to)113-143
    Number of pages31
    JournalScience Reports of the Rerearch Institutes Tohoku University Series A-Physics
    Volume44
    Issue number2
    Publication statusPublished - 1997 Mar 1

    Keywords

    • First-principles total energy calculation
    • GaAs
    • Molecular beam epitaxy
    • Reflection high energy electron diffraction
    • Scanning tunneling microscopy

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Metals and Alloys

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  • Cite this

    Xue, Q. K., Hashizume, T., Ichimiya, A., Ohno, T., Hasegawa, Y., & Sakurai, T. (1997). Scanning tunneling microscopy of the GaAs(001) surface reconstructions. Science Reports of the Rerearch Institutes Tohoku University Series A-Physics, 44(2), 113-143.