Abstract
Employing field ion-scanning tunneling microscopy (FI-STM), we have studied the GaAs(001) surface prepared by the migration enhanced epitaxy (MEE) technique in a wide range of growth temperatures. The STM images clearly show the advantageous effect of enhanced Ga migration of MEE on the surface morphology of the GaAs(001) surface.
Original language | English |
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Pages (from-to) | 5021-5025 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 75 |
Issue number | 10 |
DOIs | |
Publication status | Published - 1994 |
ASJC Scopus subject areas
- Physics and Astronomy(all)