Scanning tunneling microscopy of the GaAs(001) surface morphology prepared by migration enhanced epitaxy

Qikun Xue; Junming Zhou; Tomihiro Hashizume; Toshio Sakurai

doi:10.1063/1.355743

Scanning tunneling microscopy of the GaAs(001) surface morphology prepared by migration enhanced epitaxy

Qikun Xue, Junming Zhou, Tomihiro Hashizume, Toshio Sakurai

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Employing field ion-scanning tunneling microscopy (FI-STM), we have studied the GaAs(001) surface prepared by the migration enhanced epitaxy (MEE) technique in a wide range of growth temperatures. The STM images clearly show the advantageous effect of enhanced Ga migration of MEE on the surface morphology of the GaAs(001) surface.

Original language	English
Pages (from-to)	5021-5025
Number of pages	5
Journal	Journal of Applied Physics
Volume	75
Issue number	10
DOIs	https://doi.org/10.1063/1.355743
Publication status	Published - 1994

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Scanning tunneling microscopy of the GaAs(001) surface morphology prepared by migration enhanced epitaxy",

abstract = "Employing field ion-scanning tunneling microscopy (FI-STM), we have studied the GaAs(001) surface prepared by the migration enhanced epitaxy (MEE) technique in a wide range of growth temperatures. The STM images clearly show the advantageous effect of enhanced Ga migration of MEE on the surface morphology of the GaAs(001) surface.",

author = "Qikun Xue and Junming Zhou and Tomihiro Hashizume and Toshio Sakurai",

year = "1994",

doi = "10.1063/1.355743",

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pages = "5021--5025",

journal = "Journal of Applied Physics",

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publisher = "American Institute of Physics Publising LLC",

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T1 - Scanning tunneling microscopy of the GaAs(001) surface morphology prepared by migration enhanced epitaxy

AU - Xue, Qikun

AU - Zhou, Junming

AU - Hashizume, Tomihiro

AU - Sakurai, Toshio

PY - 1994

Y1 - 1994

N2 - Employing field ion-scanning tunneling microscopy (FI-STM), we have studied the GaAs(001) surface prepared by the migration enhanced epitaxy (MEE) technique in a wide range of growth temperatures. The STM images clearly show the advantageous effect of enhanced Ga migration of MEE on the surface morphology of the GaAs(001) surface.

AB - Employing field ion-scanning tunneling microscopy (FI-STM), we have studied the GaAs(001) surface prepared by the migration enhanced epitaxy (MEE) technique in a wide range of growth temperatures. The STM images clearly show the advantageous effect of enhanced Ga migration of MEE on the surface morphology of the GaAs(001) surface.

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U2 - 10.1063/1.355743

DO - 10.1063/1.355743

M3 - Article

AN - SCOPUS:0039672774

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SP - 5021

EP - 5025

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 10

ER -

Scanning tunneling microscopy of the GaAs(001) surface morphology prepared by migration enhanced epitaxy

Abstract

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