Scanning tunneling microscopy of the GaAs(001) surface morphology prepared by migration enhanced epitaxy

Qikun Xue, Junming Zhou, Tomihiro Hashizume, Toshio Sakurai

    Research output: Contribution to journalArticle

    14 Citations (Scopus)

    Abstract

    Employing field ion-scanning tunneling microscopy (FI-STM), we have studied the GaAs(001) surface prepared by the migration enhanced epitaxy (MEE) technique in a wide range of growth temperatures. The STM images clearly show the advantageous effect of enhanced Ga migration of MEE on the surface morphology of the GaAs(001) surface.

    Original languageEnglish
    Pages (from-to)5021-5025
    Number of pages5
    JournalJournal of Applied Physics
    Volume75
    Issue number10
    DOIs
    Publication statusPublished - 1994 Dec 1

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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