Abstract
Employing field ion-scanning tunneling microscopy (FI-STM), we have studied the GaAs(001) surface prepared by the migration enhanced epitaxy (MEE) technique in a wide range of growth temperatures. The STM images clearly show the advantageous effect of enhanced Ga migration of MEE on the surface morphology of the GaAs(001) surface.
| Original language | English |
|---|---|
| Pages (from-to) | 5021-5025 |
| Number of pages | 5 |
| Journal | Journal of Applied Physics |
| Volume | 75 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 1994 Dec 1 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Cite this
Xue, Q., Zhou, J., Hashizume, T., & Sakurai, T. (1994). Scanning tunneling microscopy of the GaAs(001) surface morphology prepared by migration enhanced epitaxy. Journal of Applied Physics, 75(10), 5021-5025. https://doi.org/10.1063/1.355743