Scanning tunneling microscopy of N2H4 on silicon surfaces

C. Tindall, L. Li, O. Takaoka, Y. Hasegawa, T. Sakurai

    Research output: Contribution to journalArticlepeer-review

    8 Citations (Scopus)

    Abstract

    The chemistry of N2H4 on Si(100)2 × 1 and Si(111)7 × 7 has been studied using scanning tunneling microscopy. At low coverages on Si(100)2 × 1 at room temperature the adsorption sites are distributed randomly on the surface and are imaged as dark spots in the dimer row by the STM. Upon annealing the substrate at 600 K, both isolated reaction products, as well as clusters of reaction products are formed on the surface. The STM images show that the majority of the isolated reaction products are adsorbed symmetrically across the dimers. Based on previous HREELS data, these are most likely NHx groups. However, the clusters are not well resolved. Because of this we speculate that they are not simply symmetrically adsorbed NHx groups, but likely have a more complicated internal structure. At higher coverages, the STM images show that the predominant pathway for adsorption is with the N-N bond parallel to the surface, in agreement with HREELS studies of this system. On Si(111)7 × 7, the molecule behaves in a manner which is similar to NH3. That is, at low coverages the molecule adsorbs preferentially at center adatoms due to the greater reactivity of these sites, while at higher coverages it also reacts with the corner adatoms.

    Original languageEnglish
    Pages (from-to)481-488
    Number of pages8
    JournalSurface Science
    Volume380
    Issue number2-3
    DOIs
    Publication statusPublished - 1997 May 15

    Keywords

    • Low index single crystal surfaces
    • Scanning tunneling microscopy
    • Silicon
    • Silicon nitride
    • Surface chemical reaction

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Materials Chemistry

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