Scanning tunneling microscopy of fullerenes on metal and semiconductor surfaces

R. Z. Bakhtizin, T. Hashizume, X. D. Wang, T. Sakurai

    Research output: Contribution to journalArticlepeer-review

    7 Citations (Scopus)

    Abstract

    The current state of the ultra-high vacuum scanning tunneling microscopy (STM) of fullerene molecules is reviewed with the use of the authors' work. We focus our work on absorption and reaction of the C60 and C 70 fullerenes, separately or in mixture, with semiconductor [Si(111)-7×7 and Si(100)-2×1] and metal [Cu(111)-1×1 and Ag(111)-1×1] surfaces. By using the STM, the adsorption geometry and the corresponding reconstruction are directly observed on these surfaces, and the intramolecular structures are revealed in high resolution STM images which are analyzed theoretically within the local charge distribution model. Results on the ordered growth of fullerene films on metal and semiconductor surfaces are presented and discussed.

    Original languageEnglish
    Pages (from-to)275-290
    Number of pages16
    JournalPhysics-Uspekhi
    Volume40
    Issue number3
    DOIs
    Publication statusPublished - 1997 Mar 1

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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