Scanning tunneling microscopy nanofabrication of electronic industry compatible thermal Si oxide

Nan Li, Tatsuo Yoshinobu, Hiroshi Iwasaki

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

We report here a nanofabrication result on a 2.7 nm thermal oxide layer using the low-energy e-beam/scanning tunneling microscope (STM) technique in conjunction with thermal annealing, in which line windows with average width of 50 nm can be formed. Comparing to the low-energy e-beam processing on thin layers of native Si oxide, this nanofabrication shows a uniform etching of the electronic industry compatible Si oxide, with which nanoscale trenches can be formed. In addition to demonstrating further the nanofabrication capability of this technique on the thermal oxide, the results present critical evidence to our previous discussions on the mechanism of the low- energy e-beam/STM nanofabrication. (C) 2000 Elsevier Science B.V.

Original languageEnglish
Pages (from-to)97-101
Number of pages5
JournalUltramicroscopy
Volume82
Issue number1-4
DOIs
Publication statusPublished - 2000 Feb
EventThe International Conference on Scanning Probe Microscopy, Cantilever Sensors and Nanostructures (SPM '99) - Seattle, WA, USA
Duration: 1999 May 301999 Jun 1

Keywords

  • Low-energy electron beam
  • Nanofabrication
  • STM
  • Si oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Instrumentation

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