Scanning tunneling microscopy investigation of the Si(103)-(1 × 1)-In surface

Zheng Gai, W. S. Yang, Q. K. Xue, T. Sakurai, R. G. Zhao

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    2 Citations (Scopus)

    Abstract

    In view of the special importance of the IV(103)-(1 × 1)-III surface structures to the III/IV interfacial systems, in this paper the atomic structure of the Si(103)-(1 × 1)-In surface is studied by means of scanning tunneling microscopy. The model that contains an indium and a silicon adatom in a unit cell, which has passed the test of low energy electron diffraction calculations, is confirmed to be correct. The dangling bond of the silicon adatom is found to be essentially empty.

    Original languageEnglish
    Pages (from-to)405-409
    Number of pages5
    JournalSurface Review and Letters
    Volume6
    Issue number3-4
    Publication statusPublished - 1999 Jun 1

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Materials Chemistry

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  • Cite this

    Gai, Z., Yang, W. S., Xue, Q. K., Sakurai, T., & Zhao, R. G. (1999). Scanning tunneling microscopy investigation of the Si(103)-(1 × 1)-In surface. Surface Review and Letters, 6(3-4), 405-409.