Scanning tunneling microscope light emission spectra of polycrystalline Ge2 Sb2 Te5 and Sb2 Te3

Y. Uehara, M. Kuwahara, S. Katano, S. Ushioda

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4 Citations (Scopus)

Abstract

We have observed scanning tunneling microscope light emission (STM-LE) spectra of Ge2Sb2Te5 and Sb2Te3. Although these chalcogenide alloys exhibit band gaps less than 0.5 eV, the STM-LE was observed with a narrow spectral width at a photon energy of 1.5 eV for both materials. By analyzing its bias voltage, polarity, and temperature dependencies combined with recently reported theoretical electronic structures, we concluded that the STM-LE is excited by electronic transitions taking place in the local electronic structure having a direct gap-like shape with a band gap of 1.5 eV, commonly found in the electronic structures of both materials.

Original languageEnglish
Pages (from-to)1902-1904
Number of pages3
JournalSolid State Communications
Volume149
Issue number43-44
DOIs
Publication statusPublished - 2009 Nov

Keywords

  • A. Semiconductors
  • C. Scanning tunneling microscopy
  • D. Electronic band structure

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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