Scanning tunneling microscope-cathodoluminescence measurement of the GaAs/AlGaAs heterostructure

Kentaro Watanabe, Yoshiaki Nakamura, Masakazu Ichikawa, Shigeyuki Kuboya, Ryuji Katayama, Kentaro Onabe

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The authors studied local optical properties of GaAs/AlGaAs heterostructure by scanning tunneling microscope-cathodoluminescence (STM-CL) spectroscopy, where low-energy (∼100 eV) electrons field emitted from STM tips were used as bright excitation sources. The STM-CL measurements were performed at the (110) cross-sectional surface of the GaAs/AlGaAs multilayer structure. By evaluating contributions to the spatial resolution from the thermalization and the diffusion of minority carriers (electrons), they found that the field emission electron beam (FEEB) diameter provides the dominant contribution to this spatial resolution of the STM-CL spectroscopy. They also clarified that the difference between the STM-CL measurement position and the STM tip position was caused by the angular deviation of the FEEB from the surface normal.

Original languageEnglish
Pages (from-to)1874-1880
Number of pages7
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume27
Issue number4
DOIs
Publication statusPublished - 2009 Aug 14

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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