Atomic structures on the surface of an InAs/GaAs heterostructure grown by the methods of molecular-beam epitaxy have been investigated in situ by scanning tunnel microscopy and reflection high-energy electron diffraction. It has been found that the deposition of a submonolayer In coating on the As-enriched GaAs(001)-(2×4) surface leads to the formation of the new construction (4×2) and the further two-dimensional growth of InAs layers. The phase (6×2) has been observed for the first time at the initial stage of growth of elasticity stressed InAs layers. Atomic models of the (4×2) and (6×2) structures have been discussed.
|Number of pages||9|
|Journal||Surface Investigation X-Ray, Synchrotron and Neutron Techniques|
|Publication status||Published - 2001 Dec 1|
ASJC Scopus subject areas
- Surfaces, Coatings and Films