Scanning tunnel microscopy investigation of an atomic structure of stressed epitaxial InAs layers on the GaAs(001) surface

R. Z. Bakhtizin, Q. K. Xue, Y. Hasegawa, Toshio Sakurai

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Atomic structures on the surface of an InAs/GaAs heterostructure grown by the methods of molecular-beam epitaxy have been investigated in situ by scanning tunnel microscopy and reflection high-energy electron diffraction. It has been found that the deposition of a submonolayer In coating on the As-enriched GaAs(001)-(2×4) surface leads to the formation of the new construction (4×2) and the further two-dimensional growth of InAs layers. The phase (6×2) has been observed for the first time at the initial stage of growth of elasticity stressed InAs layers. Atomic models of the (4×2) and (6×2) structures have been discussed.

    Original languageEnglish
    Pages (from-to)1037-1045
    Number of pages9
    JournalSurface Investigation X-Ray, Synchrotron and Neutron Techniques
    Volume16
    Issue number7
    Publication statusPublished - 2001 Dec 1

    ASJC Scopus subject areas

    • Surfaces, Coatings and Films

    Fingerprint Dive into the research topics of 'Scanning tunnel microscopy investigation of an atomic structure of stressed epitaxial InAs layers on the GaAs(001) surface'. Together they form a unique fingerprint.

    Cite this