TY - GEN
T1 - Scanning probe with nitrogen vacancy centers in diamond particle for magnetic resonance imaging
AU - Zhu, Minjie
AU - Toda, Masaya
AU - Ono, Takahito
PY - 2016/11/21
Y1 - 2016/11/21
N2 - Nitrogen vacancy (NV-) centers possess exceptional sensitivity to magnetic field even under ambient condition. The optically detectable electron spins and the atomic size make it a promising candidate for advanced magnetic resonance imaging (MRI) technique with nanoscale spatial resolution. In this work, diamond particles with NV-centers were deposited by microwave plasma chemical vapor deposition (MPCVD) under gaseous N2dopant and were fixed on the fabricated scanning probe as a magnetic sensor. While the existence of NV-center was determined by Raman spectroscopy, the photoluminescence intensity at 2.87 GHz microwave frequency was decreased by an optically detected magnetic resonance (ODMR) system. It implies that the NV-spin state can be manipulated and read out using optical excitation.
AB - Nitrogen vacancy (NV-) centers possess exceptional sensitivity to magnetic field even under ambient condition. The optically detectable electron spins and the atomic size make it a promising candidate for advanced magnetic resonance imaging (MRI) technique with nanoscale spatial resolution. In this work, diamond particles with NV-centers were deposited by microwave plasma chemical vapor deposition (MPCVD) under gaseous N2dopant and were fixed on the fabricated scanning probe as a magnetic sensor. While the existence of NV-center was determined by Raman spectroscopy, the photoluminescence intensity at 2.87 GHz microwave frequency was decreased by an optically detected magnetic resonance (ODMR) system. It implies that the NV-spin state can be manipulated and read out using optical excitation.
UR - http://www.scopus.com/inward/record.url?scp=85006959851&partnerID=8YFLogxK
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U2 - 10.1109/NANO.2016.7751404
DO - 10.1109/NANO.2016.7751404
M3 - Conference contribution
AN - SCOPUS:85006959851
T3 - 16th International Conference on Nanotechnology - IEEE NANO 2016
SP - 210
EP - 213
BT - 16th International Conference on Nanotechnology - IEEE NANO 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
Y2 - 22 August 2016 through 25 August 2016
ER -