Scanning kerr microscopy of the spin hall effect in n-doped GaAs with various doping concentration

S. Matsuzaka, Y. Ohno, H. Ohno

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We investigated the doping concentration (N D) dependence of the extrinsic spin Hall effect (SHE) in n-doped GaAs with N D raging from 3×10 16 cm -3 to 5×10 17 cm -3. By using scanning Kerr microscopy (SKM) measurements, we observed the Kerr rotation signal due to the spin accumulation near the channel edges in all the samples with different N D. Moreover, the position and in-plane magnetic field dependence of the Kerr rotation signal are found to vary with N D. We analyzed the N D dependence of the spin Hall conductivity by taking account of the N D-dependent spin lifetime based on the typical drift-diffusion model.

Original languageEnglish
Pages (from-to)37-39
Number of pages3
JournalJournal of Superconductivity and Novel Magnetism
Volume23
Issue number1
DOIs
Publication statusPublished - 2010 Jan 1

Keywords

  • Kerr rotation
  • Spin Hall effect
  • Spin current

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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