Scaling of the single-electron tunnelling current through ultrasmall tunnel junctions

S. Amakawa, K. Hoh, M. Fujishima, H. Mizuta, K. Tsukagoshi

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The effect of a tunnelling electron on the tunnel barrier shape is studied at the limit where a static image charge model is applicable. It is shown that the single-electron tunnelling current through an ultrasmall voltage-biased junction is not proportional to the junction area because of charging at the electrodes. Simple expressions are presented for the effective static barrier shape of a voltage-biased junction and of a junction in a circuit, the former of which accounts for the anomalous current scaling. A possible experimental arrangement for verifying the scaling relationship is suggested, with numerical results.

Original languageEnglish
Pages (from-to)7223-7228
Number of pages6
JournalJournal of Physics Condensed Matter
Volume12
Issue number32
DOIs
Publication statusPublished - 2000 Aug 14
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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